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Solvothermal Synthesis of fto Conductive Materials

A technology of conductive materials and synthesis methods, applied in chemical instruments and methods, other chemical processes, tin oxide, etc., to achieve good application prospects, enrich surface hydroxyl groups, and avoid high-temperature treatment processes

Active Publication Date: 2020-04-21
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, high temperature treatment tends to cause condensation and dehydration of hydroxyl groups on the surface of oxides, resulting in a sharp decrease, accompanied by grain growth and a significant decrease in the specific surface area of ​​the material, which is extremely important for metal oxides to exert their high specific surface area and high surface activity. Adverse

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  • Solvothermal Synthesis of fto Conductive Materials
  • Solvothermal Synthesis of fto Conductive Materials
  • Solvothermal Synthesis of fto Conductive Materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] In this example, first dissolve 6g of tin tetrachloride pentahydrate in 80mL of absolute ethanol, then add 10mL of hydrogen peroxide (27.5wt.%) and 5mL of hydrofluoric acid (40wt.%) to prepare a solvothermal mother liquor; take 80 Add 10g of the target metal tin powder (99wt.%) to the solvothermal mother liquor, stir for 3 minutes and transfer all the materials into a polytetrafluoroethylene-lined stainless steel reaction kettle with a volume of 200mL, and first react at 100°C for 8 Hours, fully oxidize metal tin and introduce fluorine ions, and then solvothermal reaction at 180 ° C for 16 hours to convert fluorine-containing tin hydroxide or amorphous tin dioxide into highly crystallized fluorine-doped tin dioxide; solvothermal After the reaction was completed, the reactant was cooled to room temperature, washed three times with deionized water, and then dried at 120°C to obtain the FTO conductive material.

Embodiment 2

[0026] In this example, the electrical conductivity of the material prepared in Example 1 was evaluated by voltammetry. Grind the FTO conductive material into powder first, then weigh 0.7g of the powder, add it to a circular mold with a diameter of 1.5cm, and press it into a thin slice. Clamp it in the middle and press it tightly, then use a high-precision programmable DC power supply to apply a voltage of 3V between the two copper plates, and measure the current at the same time.

[0027] The above method was used to test the conductivity of the FTO prepared by 450°C roasting, the FTO prepared by 140°C solvothermal and the FTO prepared by 180°C solvothermal (Example 1), and the measured currents were 55mA, 1.2mA and 38mA respectively. It can be seen that the conductivity of the FTO material prepared by 180 ℃ solvothermal is close to that of the sample baked at 450 ℃, while the FTO material prepared by 140 ℃ solvothermal is almost non-conductive, indicating that the solvotherm...

Embodiment 3

[0029] In this example, the FTO conductive material synthesized by solvothermal synthesis (solvothermal temperature 140°C, 160°C and 180°C) and the FTO conductive material synthesized by calcination method (calcination temperature 450°C) were used as adsorbents respectively. Arsenic is adsorbed, and the kinetic curve of arsenic adsorption is determined. The arsenic concentration in the raw water was 947ppb, and the amount of the material was 0.5g / L. After the material was added to the arsenic solution, the stirring was continued and samples were taken at different times to measure the arsenic concentration. After 480 minutes of reaction, the adsorption of arsenic by all materials reached equilibrium, and after 960 minutes, the adsorption of arsenic by all materials reached equilibrium ( figure 2 ), wherein the arsenic equilibrium concentration corresponding to the roasting synthetic material is 774.7ppb, and the arsenic equilibrium concentration corresponding to the solvother...

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Abstract

The invention provides a solvothermal synthesis method for a FTO conductive material. The solvothermal synthesis method comprises the following steps: dissolving a tin salt in an alcohol solvent and then adding an oxidizing agent and fluoride to prepare solvothermal mother liquor; adding elemental tin, stannous oxide or stannous hydroxide to solvothermal mother liquor, carrying out thorough mixing, and transferring all the materials into a closed pressure vessel with high corrosion resistance; heating the closed pressure vessel and performing a solvothermal reaction at 110-290 DEG C for 0.5-96hours, wherein the reaction can be completed at a single temperature at a time or be completed in stages at different temperatures; and after the solvothermal reaction is completed, cooling the obtained material to room temperature, washing the material with water, and then drying the material at 50 to 220 DEG C to obtain the FTO conductive material.

Description

technical field [0001] The invention belongs to the technical field of FTO conductive materials, and in particular relates to a solvothermal synthesis method of FTO conductive materials. Background technique [0002] The electrochemical process is an important physical and chemical process, often accompanied by the transfer of energy and substances, as well as the redox of substances, and has irreplaceable application value in the fields of new energy, environmental protection, catalysis, and sensing and detection. The electrochemical process requires the electrode to have a certain conductivity. Metal oxides have many advantages, such as large specific surface area, rich surface active sites, strong adsorption, easy synthesis, etc., but due to their relatively poor conductivity, they are generally not suitable for direct use as electrodes. [0003] Conductive oxides make up for this defect to a certain extent. Currently known conductive oxides are ruthenium oxide, iridium...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/02C01G19/04B01J20/06B01J20/30C02F1/28C02F101/30
CPCB01J20/0251B01J20/0288B01J20/06C01G19/02C01G19/04C01P2006/40C02F1/281C02F2101/308
Inventor 方峰徐正超骆凯翔王世琦刘晓东
Owner SOUTHEAST UNIV
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