A kind of epitaxy device of semiconductor light-emitting diode

Abstract

The invention provides the epitaxial device of a semiconductor light emitting diode. The device comprises an N electrode, an N-type semiconductor contact layer, an N-type semiconductor conducting layer, a luminescent layer, a P-type semiconductor conducting layer, a P-type semiconductor contact layer and a P electrode which are successively contacted with each other. An interface contact resistance between the N electrode and the N-type semiconductor contact layer is adjusted by the doping concentration of the N-type semiconductor contact layer. Or an interface contact resistance between the Pelectrode and the P-type semiconductor contact layer is adjusted by the doping concentration of the P-type semiconductor contact layer. In the invention, in an interface where the surface of a semiconductor is contacted with a metal electrode, current expansion is improved; because the contact of metal and the semiconductor is sensitive, the electric conductivity of the interface is easy to adjust and control, and only a thin layer is needed in an epitaxy so that the current expansion can be greatly improved; and the ascending range of a device voltage is small.

Description

technical field [0001] The invention relates to the field of light emitting diodes, in particular to an epitaxial device of a semiconductor light emitting diode. Background technique [0002] In recent years, the progress of material preparation and device manufacturing technology has greatly improved the luminous efficiency of light-emitting diodes (LEDs). Compared with traditional incandescent lamps and fluorescent lamps, LEDs have the advantages of energy saving, environmental protection and long life. Therefore, LEDs are widely used in various lighting and displays. [0003] In order to reduce the light blocking of the electrodes, the area ratio of the LED electrodes on the chip is usually designed to be as small as possible. But this makes the distance between the electrodes larger, so that the current cannot be evenly distributed between the electrodes. In order to make the current spread more uniform, in the current technology, by growing the overlapping structure ...

AI Technical Summary

Problems solved by technology

[0005] In the existing technology, by adding n-GaN / u-GaN (undoped GaN, high resistance) overlapping structure in the epitaxial structure, the principle is to improve the current spreading layer inside the semiconductor material, and the thickness of the epitaxial structure needs to be increased Larger, the growth cost increases more

In addition, the increased bulk resistance is larger, and the operating voltage of the device is increased more

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