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Simulation method for removing hydrogen impurity in n-type phosphorus doping diamond film

A technology of diamond film and simulation method, which is applied in the field of n-type phosphorus-doped diamond film, can solve problems affecting the electrical properties of diamond films, and achieve the effect of improving electrical properties

Active Publication Date: 2018-08-21
WUHAN UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the hydrogen impurity in the current n-type phosphorus-doped diamond film affects the electrical properties of the diamond film, and propose a simulation method for breaking the phosphorus-hydrogen bond of the n-type phosphorus-doped diamond film. On this basis, further Calculate the range of femtosecond laser intensity, frequency and temperature that can remove hydrogen impurities in n-type phosphorus-doped diamond films

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  • Simulation method for removing hydrogen impurity in n-type phosphorus doping diamond film

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[0022] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0023] The removal of hydrogen element in the preparation process of n-type phosphorus-doped diamond film is of great significance to improve the electrical properties of n-type diamond film and increase its industrial application value. Therefore, the method for removing hydrogen impurities during the preparation of n-type phosphorus-doped diamond films is designed. By applying femtosecond laser and temperature field during the preparation of n-type phosphorus-doped diamond films, only the n-type phosphorus-doped diamond films are broken. Phosphorus-hydrogen bond, remove the hydrogen element in the film, and then improve the electrical properties of n-type phosphorus-doped diamond. In order to determine the intensity and frequency of the femtosecond laser, the temperature range of the temperature field. Such as figure 1 As shown, a simul...

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Abstract

The invention discloses a simulation method for removing the hydrogen impurity in an n-type phosphorus doping diamond film. According to time dependent density functional theory and the molecular dynamics theory, the first principle and molecular dynamics calculation is conducted on an n n-type phosphorus doping diamond film model, photon absorption, valence electron transition and chemical bond breakage in the model are simulated under a laser field and a temperature field, and the method for removing the hydrogen element impurity in the n-type phosphorus doping diamond film is further provided. The strength, the frequency and the range value of the temperature of femtosecond lasers which can break phosphorus and hydrogen bonds and remove the hydrogen impurity are calculated.

Description

technical field [0001] The invention relates to the field of n-type phosphorus-doped diamond films, in particular to a simulation method for removing hydrogen impurities in n-type phosphorus-doped diamond films. Background technique [0002] Diamond film as a semiconductor material has high carrier mobility (1000cm 2 / (V·s)), high dielectric breakdown electric field (5~10MV / cm), high thermal conductivity (20W / (K·cm)) and wide bandgap (5.47eV), making it widely used in the electronics industry It has great application potential. However, due to the low conductivity of diamond films at room temperature, its application in the electronics industry is limited. The n-type diamond film with high conductivity can be obtained by doping donor elements in the diamond film, which is of great scientific significance for the realization of its application in field emission displays, semiconductor devices, electrochemistry and other fields. [0003] Phosphorus is the only donor commonl...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/56C30B33/00
CPCC23C16/56C30B33/00
Inventor 申胜男刘胜李辉沈威彭庆严晗
Owner WUHAN UNIV
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