Silicified diamond/SiC composite material preparation method

Abstract

The invention discloses a silicified diamond / SiC composite material preparation method, which belongs to the field of electronic packaging materials. Diamond particles and silicon powder are firstly subjected to wet mixing, sintering is carried out after thorough grinding, the diamond surface and the silicon powder react, and a layer of silicon carbide coating is generated; then, the diamond particles with the surface coated with the silicon carbide and the silicon powder are mixed, an organic binder is added at the same time, grinding is carried out, mixing on a mixer is carried out, and uniform composite particles are obtained; the composite particles are subjected to prepressing and debinding and are transferred to a vacuum infiltration furnace, a silicon burial method is adopted for vacuum infiltration, and a compact diamond / SiC composite material is prepared. The silicon powder is adopted to modify the diamond particles, the interfacial bonding between diamond and silicon is improved, the compactness of the obtained diamond / SiC composite material is more than 95%, the hardness is above HRA 80, the bending strength exceeds 200 MPa, the thermal conductivity reaches 600 W / mK, andthe thermal expansion coefficient 1.5 to 4*10<-6> / K. Thus, multiple products with complex characters, complex curvature and large size can be prepared at one time, the production efficiency is high,and the cost is low.

Description

technical field [0001] The invention belongs to the field of electronic packaging materials and relates to a diamond particle reinforced composite material for electronic packaging. The diamond / SiC / Si composite material prepared by this method is a new type of electronic packaging material with high density, high thermal conductivity and low thermal expansion, and has great market potential in the manufacture and production of integrated circuit substrates. Background technique [0002] Electronic packaging materials are the main constituent materials of integrated circuits. With the rapid development of electronic technology, the development of integrated circuits, large-scale and ultra-large-scale integrated circuits has become an important symbol of the development of electronic technology. At the same time, the rapid development of integrated circuits has led to higher requirements for the efficiency of electronic components. The requirements, especially for the thermal...

AI Technical Summary

Problems solved by technology

The high temperature and high pressure method mainly uses diamond and silicon particles as raw materials, and uses high temperature and high pressure means to press and form. The composite materials prepared by this method generally have high density and thermal conductivity, but the defect of this method is that it requires The pressure conditions are very high and the requirements for equipment are high, which leads to an increase in production costs. In contrast, the liquid infiltration method is a more effective and feasible preparation method