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Method and device for removing hydrogen impurities in preparation process of n-type phosphorus doped diamond membrane

A technology of diamond film and preparation process, which is applied in the field of removing hydrogen impurities during the preparation process of n-type phosphorus-doped diamond film, can solve the problems affecting the electrical properties of diamond film, and achieve the effect of improving electrical properties

Active Publication Date: 2018-06-29
WUHAN UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to propose a method and device for removing hydrogen impurities during the preparation of n-type phosphorus-doped diamond films in order to solve the problem that hydrogen impurities in n-type phosphorus-doped diamond films affect the electrical properties of diamond films.

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  • Method and device for removing hydrogen impurities in preparation process of n-type phosphorus doped diamond membrane
  • Method and device for removing hydrogen impurities in preparation process of n-type phosphorus doped diamond membrane
  • Method and device for removing hydrogen impurities in preparation process of n-type phosphorus doped diamond membrane

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Embodiment Construction

[0024] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0025] The embodiment of the present invention provides a method for removing hydrogen impurities during the preparation of n-type phosphorus-doped diamond films, in which a femtosecond laser and a temperature field are applied during the preparation of n-type phosphorus-doped diamond films. The femtosecond laser is generated by a femtosecond laser source, and then irradiated on the surface of n-type phosphorus-doped diamond film after passing through the laser galvanometer. The femtosecond laser irradiates the surface of the n-type phosphorus-doped diamond film by scanning the surface through the laser galvanometer.

[0026] Preferably, the pulse width of the femtosecond laser is femtosecond level. Applying the temperature field is realized by regulating the temperature of the growth chamber during the preparation of the n-type phosphorus...

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Abstract

The invention discloses a method and device for removing hydrogen impurities in the preparation process of an n-type phosphorus doped diamond membrane. According to the method, femtosecond laser and atemperature field are simultaneously applied in the preparation process of an n-type phosphorus doped diamond membrane, only phosphorus hydrogen bond electrons in the n-type phosphorus doped diamondmembrane are excited to an excited state by the femtosecond laser, and only phosphorus bonds of valence electrons at the excited state are broken through the temperature field, so that the hydrogen element in the membrane can be removed. By applying the femtosecond laser and the temperature field in the preparation process of the n-type phosphorus doped diamond membrane, the phosphorus hydrogen bonds in the n-type phosphorus doped diamond membrane are broken, the hydrogen element in the membrane can be removed, and furthermore the electric properties of n-type phosphorus doped diamonds can beimproved.

Description

technical field [0001] The invention relates to the field of n-type phosphorus-doped diamond films, in particular to a method and device for removing hydrogen impurities during the preparation of n-type phosphorus-doped diamond films. Background technique [0002] Diamond film as a semiconductor material has high carrier mobility (1000cm 2 / (V·s)), high dielectric breakdown electric field (5~10MV / cm), high thermal conductivity (20W / (K·cm)) and wide bandgap (5.47eV), making it widely used in the electronics industry It has great application potential. However, due to the low conductivity of diamond films at room temperature, its application in the electronics industry is limited. The n-type diamond film with high conductivity can be obtained by doping donor elements in the diamond film, which is of great scientific significance for the realization of its application in field emission displays, semiconductor devices, electrochemistry and other fields. [0003] Phosphorus is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/28
Inventor 刘胜申胜男李辉沈威彭庆严晗
Owner WUHAN UNIV
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