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Preparation method of noble metal/SiO2 composite particle and semi-conductor quantum dot laminated quantum dot luminescent thin film

A technology of quantum dot luminescence and composite particles, which is applied in chemical instruments and methods, luminescent materials, nano-optics, etc., can solve problems such as difficult to meet, achieve low production cost, novel preparation method, and improve photoluminescence performance.

Inactive Publication Date: 2018-06-08
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the former, currently limited by the characteristics of the quantum dot luminescent material itself, it is difficult to further increase the quantum yield of the quantum dot luminescent material, and it is necessary to find a new breakthrough
With the improvement of people's requirements for image quality and picture quality, higher requirements are put forward for quantum dot photoluminescence optical films. It is difficult to meet the needs of today's information society to produce high-quality photoluminescent optical films based on traditional semiconductor quantum dot photoluminescence optical films. Demand for high-quality, high-quality quantum dot photoluminescent optical films for displaying images

Method used

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  • Preparation method of noble metal/SiO2 composite particle and semi-conductor quantum dot laminated quantum dot luminescent thin film
  • Preparation method of noble metal/SiO2 composite particle and semi-conductor quantum dot laminated quantum dot luminescent thin film
  • Preparation method of noble metal/SiO2 composite particle and semi-conductor quantum dot laminated quantum dot luminescent thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Weigh 0.049g of CuI and 0.292g of indium acetate respectively, take 10ml of ODE with a graduated cylinder and add them to the three-necked flask in turn, first blow at 500rpm with nitrogen for 10min, then heat to 120°C, keep After 30 minutes, inject 6ml of DDT, heat to 230°C (8 minutes), and time at 230°C for 5 minutes.

[0033] (2) Take 1.467g of zinc acetate, 8ml of OA and 4ml of ODE and heat them to 190°C for 30min until completely dissolved to form a transparent solution. The precursor solution of Zn can be obtained;

[0034](3) The precursor of Zn was injected into the precursors of CuI and indium acetate at a rate of 1ml / min, and then the temperature was raised to 240°C and kept for 1h. Then remove from heat and cool to room temperature. The methanol solution is injected into the mixed solution to obtain the corresponding nanocrystal precipitation, and after centrifugation and washing, the obtained CuInS / ZnS semiconductor quantum dots are dispersed into the ...

Embodiment 2

[0040] (1) Weigh 0.1534g of CuI powder and 0.9332g of indium acetate powder, take 2ml of DDT, 1ml of OA and 20ml of ODE, degas under argon for 20min, then heat to 120°C (keep for 30min) and then Heat to 230°C for 15 minutes.

[0041] (2) Heat 1.317g of zinc acetate dihydrate, 4ml of oleylamine and 12ml of ODE to 110°C for 30min until completely dissolved to form a transparent solution. The precursor solution of Zn can be obtained;

[0042] (3) The precursor of Zn was injected into the precursors of CuI and indium acetate at a rate of 1ml / min, and then the temperature was raised to 240°C and kept for 3h. Then remove from heat and cool to room temperature. The ethanol solution is injected into the mixed solution to obtain the corresponding nanocrystal precipitation, and after centrifugation and washing, the obtained CuInS / ZnS semiconductor quantum dots are dispersed into the chloroform or toluene solution.

[0043] (4) Measure 100ml of chloroauric acid (0.01wt%) with a measur...

Embodiment 3

[0048] (1) Weigh 0.024g of CuI powder and 0.146g of indium acetate powder, take 5ml of ODE, first degas under argon for 20min, then heat to 120°C (hold for 30min), then heat to 230°C for 5min.

[0049] (2) Take 0.878g of zinc acetate dihydrate, 4ml of oleic acid and 2ml of ODE and heat to 160°C for 30min until completely dissolved to form a transparent solution. The precursor solution of Zn can be obtained;

[0050] (3) The precursor of Zn was injected into the precursors of CuI and indium acetate at a rate of 1ml / min, and then the temperature was raised to 230°C and kept for 3h. Then remove from heat and cool to room temperature. The ethanol solution is injected into the mixed solution to obtain the corresponding nanocrystal precipitation, and after centrifugation and washing, the obtained CuInS / ZnS semiconductor quantum dots are dispersed into the chloroform or toluene solution.

[0051] (4) Measure 100ml of chloroauric acid (0.01wt%) with a measuring cylinder and add it i...

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Abstract

The invention relates to a preparation method of a noble metal / SiO2 composite particle and semi-conductor quantum dot laminated quantum dot luminescent thin film. The preparation method comprises thefollowing steps: on an ITO glass substrate, single-layered metal nano-particles kernels are assembled to serve as a plasma excimer enhancement center, and metal nano-particles are wrapped with SiO2 housings to serve as isolating layers; and a CuInS / ZnS quantum dot semi-conductor quantum dot is taken as a photoluminescence center. The noble metal / SiO2 composite particle and semi-conductor quantum dot laminated quantum dot luminescent thin film is prepared by the spin-coating process, and the quantum dot luminescent thin film is finally prepared by the organic spin-coating and packaging processes. The preparation method is novel, low in manufacture cost and simple in preparation process, and becomes the most effective method which most probably improves the light field intensity of the semi-conductor quantum dot, improves the utilization efficiency of exciting light and accordingly improves the overall luminescence property of the semi-conductor quantum dot luminous optical film at last.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and devices, in particular to a noble metal / SiO 2 The invention discloses a method for preparing a quantum dot luminescent thin film laminated with composite particles and semiconductor quantum dots. Background technique [0002] With the progress of society and the development of science and technology, people are increasingly dependent on information exchange and transmission. As the main carrier and material basis of information exchange and transmission, display devices have become a hotspot and highland that many scientists engaged in information optoelectronic research are vying to seize. Quantum dot photoluminescent optical thin film devices, as a display device that is most likely to be practical, play a vital role in the fields of information exchange and transmission. However, as of now, quantum dot optical films basically use simple semiconductor quantum dots as the photolumine...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/883
Inventor 杨尊先郭太良赵志伟阮玉帅叶冰清胡海龙周雄图陈耿旭徐胜赖寿强
Owner FUZHOU UNIV
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