Preparation method of absorption layer of copper-indium-gallium-selenium solar battery

Abstract

The invention discloses a preparation method of an absorption layer of a copper-indium-gallium-selenium solar battery. The preparation method comprises the following steps: simultaneously inflating hydrogen selenide gas and inert gas into a chamber, sputtering a copper-gallium target material and an indium target material onto a substrate at room temperature by a magnetron sputtering technology under first power and within a first time period; raising the temperature of the substrate to a preset temperature, and sputtering the copper-gallium target material and the indium target material ontothe substrate by the magnetron sputtering technology within a second time period; increasing the first power to second power, and sputtering the copper-gallium target material and the indium target material onto the substrate by the magnetron sputtering technology under a preset temperature condition and within a third time period. By the preparation method of the absorption layer of the copper-indium-gallium-selenium solar battery, provided by the invention, through simultaneous sputtering of the CuGa target material and the In target material in an H2Se atmosphere, the CIGS absorption layercan be moulded in a sputtering manner in only one step, so that the processing technology is effectively simplified, and the production efficiency and the control precision are improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing an absorbing layer of a copper indium gallium selenide solar cell. Background technique [0002] Cu(In,Ga)Se2(CIGS) is a direct bandgap semiconductor. With the doping of Ga element, the bandgap width of CIGS can be adjusted between 1.02eV and 1.68eV. CIGS has a high absorption coefficient for visible light and is the most promising material for making high-efficiency and low-cost thin-film solar cells. The current magnetron sputtering technology to prepare the CIGS battery absorber layer is to prepare the CIGS precursor film by sputtering multiple targets (such as single target sputtering, copper-rich target and copper-poor target at the same time or successively sputtering), and then the CIGS precursor film Heat treatment: heating the elemental Se source in a vacuum or an inert atmosphere with a certain pressure to form a saturated vapor pressure of S...

AI Technical Summary

Problems solved by technology

[0003] However, the disadvantage of the prior art is that the preparation process of the CIGS absorbing layer is complicated, and it needs to be selenized after multi-step sputtering

Since the sputtering of each layer requires precise control and adjustment of the optimal element content ratio to meet the requirements of CIGS preparation, it is difficult to control the processing quality of each film layer

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