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Multi-channel horizontal high-voltage device

A horizontal high-voltage, multi-channel technology, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of rising on-resistance and limiting applications, and achieve reduced on-resistance, increased number of channels, and small on-resistance Effect

Active Publication Date: 2018-05-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the device is used in high-voltage applications, the on-resistance rises sharply, which limits the application of high-voltage devices in high-voltage power integrated circuits, especially circuits that require low conduction loss and small chip area
In order to overcome the problem of high on-resistance, J.A.APPLES et al. proposed RESURF (Reduced SURface Field) to reduce the surface field technology, which is widely used in high-voltage devices. Although the on-resistance is effectively reduced, the breakdown voltage and conduction The contradictory relationship of resistance still needs to be further improved

Method used

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  • Multi-channel horizontal high-voltage device

Examples

Experimental program
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Effect test

Embodiment 1

[0020] Such as figure 2 As shown, a multi-channel lateral high voltage device whose cell structure is integrated on a semiconductor substrate 1 of a first conductivity type includes a buried oxide layer 2 arranged on the upper end surface of the substrate 2 and a buried oxide layer 2 arranged above the buried oxide layer 2. The second conductivity type semiconductor drift region 3, the trench structure 4 arranged on the left and outside of the second conductivity type semiconductor drift region 3, the second conductivity type semiconductor drain region 7 on the right inside the second conductivity type semiconductor drift region 3, the second conductivity type semiconductor drift region 3 The inside of the second conductivity type semiconductor drift region 3 is adjacent to the first conductivity type semiconductor body region 5 on the right side of the trench structure 4, the second conductivity type semiconductor source region 8 located inside the first conductivity type semic...

Embodiment 2

[0023] Such as image 3 As shown, the difference between this embodiment and Embodiment 1 is that each metal gate is connected to each other inside the device.

Embodiment 3

[0025] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the device includes two body region units, the multi-gate metal structure 10 includes three metal gates led from the surface of the device into the trench structure 4, and the multi-gate metal The structure 10 provides 4 channels in the first conductivity type semiconductor body region 5, and each metal gate is led to the device surface through a through hole, thereby forming a three-gate four-channel device structure, which greatly reduces the device The specific on-resistance.

[0026] In addition, in each embodiment, the second conductivity type semiconductor drain region 7 can be replaced with a first conductivity type semiconductor, thereby forming a LIGBT structure.

[0027] In each embodiment, the substrate material is SOI substrate or bulk silicon.

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Abstract

The invention provides a multi-channel horizontal high-voltage device. A cell structure is integrated on a semiconductor substrate of a first conductive type, and comprises a buried oxide layer, a semiconductor drift region of a second conductive type and a groove structure, a semiconductor body region of the first conductive type, a semiconductor source region of the second conductive type and asemiconductor contact region of the first conductive type form a body region unit, the device comprises at least one body region unit, and a multi-grid metal structure is arranged in the groove structure, comprises at least two metal grids, and provides at least two channels in the semiconductor body region of the first conductive type so as to provide a low-resistance channel for carriers. According to the high-voltage device, the structure that the groove includes multiple grids is used to increase channels, conductive paths of the device are increased, the conduction resistance of the device is reduced greatly, contradiction between the conduction resistance and withstand voltage is alleviated, and the conduction resistance is lower under the same chip area.

Description

Technical field [0001] The invention relates to the technical field of semiconductor power devices, and relates to a multi-channel lateral high voltage device. Background technique [0002] Lateral high-voltage devices are an indispensable part of the development of high-voltage power integrated circuits. High-voltage power devices require high breakdown voltage, low on-resistance and low switching losses. The lateral high voltage device achieves high breakdown voltage, and the drift region used to bear the withstand voltage is required to have a long size and low doping concentration. However, in order to meet the low on-resistance of the device, the drift region as a current channel is required to have a high The doping concentration. In the design of power LDMOS (Latral Double-diffusedMOSFET) devices, the breakdown voltage (Breakdown Voltage, BV) and the specific on-resistance (Specific on-resistance, R on,sp ) There is a contradiction. When the device is in high-voltage app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/78
CPCH01L29/42356H01L29/7816H01L29/7831
Inventor 周锌袁章亦安李珂乔明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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