Production method of high-temperature superconducting material

Abstract

The invention discloses a high-temperature superconducting material and a method of preparing the high-temperature superconducting material. The high-temperature superconducting material is prepared from yttrium, aluminum, nickel, lithium, zinc, barium and boron; and the preparation method comprises the steps of (1) preparing a nitrate mixed solution; (2) adding citric acid to the nitrate mixed solution; (3) heating and concentrating the mixed solution obtained in the step (2) until complete combustion of gel and forming powder; (4) grinding the powder evenly; (5) putting the ground powder into a high-temperature furnace for calcining and cooling to room temperature; and (6) carrying out a photoresist removal process, which comprises the following steps of a softening process, a dry degumming process and a wet degumming process, and taking out a product to obtain the superconducting material. Preparation is carried out by adopting a sol-gel method and a high-temperature calcination method to form the superconducting material with uniform texture, so that the defect of low critical temperature of an existing superconducting material is avoided, and the prepared superconducting material with relatively high critical temperature has the superconducting characteristic under the condition of relatively high temperature.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a production method of a high-temperature superconducting material. Background technique [0002] A superconducting material refers to a material that exhibits the properties of zero resistance and repelling magnetic lines of force under certain low temperature conditions. It has been found that 28 kinds of elements and thousands of alloys and compounds can become superconductors. [0003] The magnetic field strength required to destroy the superconducting state of a superconducting material and transform it to a normal state, expressed in Hc. The relationship between Hc and temperature T is Hc=H0[1-(T / Tc) 2 ], where H0 is the critical magnetic field at 0K. [0004] 5) Critical current and critical current density: [0005] The critical temperature Tc of a superconductor is related to its isotopic mass M. The larger the M, the lower the Tc, which is called the isotope ...

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Problems solved by technology

If the plasma energy is not properly controlled, it is very easy to damage the silicon in the substrate 10, resulting in device damage, and dry etching can easily cause radiation damage on the device surface

If the dry etching process is not carried out, the photoresist 12 of the hard surface layer 13 is simply removed by wet cleaning, although the chance of damage to the silicon surface can be reduced, but when the ion implantation energy is higher and the formed hard surface layer 13 When it is thicker, it is difficult to completely remove the photoresist and hard surface layer by simple wet cleaning, thus leaving photoresist residue 14 on the surface of the substrate 10

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