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An all-solid-state electric field reconfigurable magneto-optical device

A magneto-optical device, all-solid-state technology, applied in the direction of instruments, optics, nonlinear optics, etc., can solve the problems of difficult to achieve universal magnetic control, semiconductor process incompatibility, non-volatile control, etc., to solve the problem of poor process compatibility , easy process compatibility, and the effect of improving device integration

Active Publication Date: 2020-01-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] In view of the above-mentioned problems or deficiencies, in order to simultaneously solve the problems of incompatibility between the existing technology and solid-state semiconductor technology, difficulty in controlling magnetism with electric field in a non-volatile manner, difficulty in realizing large-area magnetic regulation and universality, the present invention provides a An all-solid-state electric field reconfigurable magneto-optic device

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  • An all-solid-state electric field reconfigurable magneto-optical device

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Embodiment Construction

[0040] The present invention will be described in detail below in conjunction with the embodiments and accompanying drawings.

[0041] Device structure: A heavily doped p-type Si single crystal substrate is selected as the bottom electrode and supports the growth of the film. The thickness of the Si sheet is 0.5mm; yttrium iron garnet (the chemical formula is Y 3 Fe 5 o 12 , film thickness is 56.0nm) film as a lattice-matched seed layer to grow cerium-doped yttrium iron garnet film (chemical formula is CeY 2 Fe 5 o 12 , film thickness 49.6nm), CeY 2 Fe 5 o 12 It is a magnetic medium layer; titanium oxide (chemical formula is TiO x , 0x . The thickness of the gold top electrode is 6.4nm, and its diameter is 650μm (the diameter of the top electrode is too large to cause breakdown of the device; the diameter of the top electrode is related to the defect density and breakdown field strength in the bottom film, the bottom film defect density is low, and the breakdown field ...

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Abstract

The invention belongs to the technical field of magneto-optical devices, in particular to an all-solid-state electric field reconfigurable magneto-optic device. The invention adopts an all-solid-state structure to make it more compatible with the semiconductor process; utilizes the electric field to control the magneto-optic effect of the magnetic thin film in a non-volatile way, and reduces the static power consumption of the device; utilizes the uniformity of the ion migration of the adjustable material layer to realize The consistent control of the magneto-optical effect in the range of hundreds of microns has been achieved, and the problem that the device based on the ion-conducting filament mechanism is difficult to scale down has been solved; the separated adjustable material layer and magnetic medium layer have been used to realize the electric field control. Magneto-optical effect of a large class of magnetic insulators or semiconductors. Finally, the present invention realizes in one device at the same time: an all-solid-state structure; non-volatile manipulation of the magneto-optical effect by an electric field; large-area manipulation of the magneto-optic effect of magnetic thin films; universal manipulation of the magneto-optic effect of various magnetic insulators or semiconductors .

Description

technical field [0001] The invention belongs to the technical field of magneto-optical devices, relates to a magnetic oxide film material, in particular to an all-solid-state electric field reconfigurable magneto-optic device. Background technique [0002] At present, the magnetic control of most radio frequency and microwave magnetic devices and reconfigurable magneto-optical devices is realized by current-driven electromagnets. Electromagnets have many disadvantages such as high power consumption, large volume, and high noise, which hinder the improvement of device performance. ([1]Liu M, Howe B M, Grazulis L, et al. Voltage-Impulse-Induced Non-Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices[J].Advanced Materials,2013,25(35):4886-92. [2]Huang D,Pintus P,Zhang C,et al.Dynamically reconfigurable integrated optical circulators[J].Optica,2017,4(1):23-30.[3]Zhou Z.Voltage Control of Magnetism[J].Ph .D thesis.2014...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/09
CPCG02F1/09G02F1/092
Inventor 毕磊朱银龙秦俊梁潇张燕王闯堂
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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