Device and method for inhibition of charge injection under transient electric field
A technology for suppressing transient and charge injection, applied to circuits, electrical components, conductor/cable insulation, etc., can solve problems such as flashover faults, electric field distortion aggravation, breakdown, etc., to suppress injection, improve insulation life, and improve The effect of starting voltage
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Embodiment 1
[0023] An embodiment of the present invention provides a method for suppressing charge injection under a transient electric field, the method comprising the following steps:
[0024] Select a magnesium oxide target with a purity of 99.99% and put it into a magnetron sputtering apparatus, fix the substrate on the base of the magnetron sputtering apparatus for magnetron sputtering, and form a layer of magnesium oxide film on the surface of the substrate;
[0025] Insulate and cover the surface of the base body on the current-carrying module of the high-voltage equipment.
[0026] Before forming an insulating layer on the surface of the current-carrying part of the high-voltage equipment, the target material is a magnesium oxide target with a purity of 99.99%, and a layer of magnesium oxide film is formed on the surface of the substrate by magnetron sputtering coating or evaporation coating, and then, After the high-voltage equipment current-carrying module is insulated and cover...
Embodiment 2
[0028] see figure 1 , an embodiment of the present invention provides a method for suppressing charge injection under a transient electric field, the method comprising the following steps:
[0029] Select a magnesium oxide target with a purity of 99.99% and put it into a magnetron sputtering apparatus, fix the substrate on the base of the magnetron sputtering apparatus for magnetron sputtering, and form a layer of magnesium oxide film on the surface of the substrate;
[0030] Insulate and cover the surface of the base body on the current-carrying module of the high-voltage equipment.
[0031] Optionally, the working mode of the magnetron sputtering apparatus is a pulse excitation source, the sputtering power is 300W, the sputtering chamber is evacuated to 0.35Pa, and high-purity argon gas is introduced into the chamber, and the gas flow rate is set to 35sccm, where sccm means standard milliliter per minute flow.
[0032] Optionally, the sputtering time of the magnetron sputt...
Embodiment 3
[0037] see figure 1 , An embodiment of the present invention provides a device for suppressing charge injection under a transient electric field, including the current-carrying module of a high-voltage equipment that has been insulated and covered according to any one of claims 1-5.
[0038] Optionally, the device includes a high-voltage motor provided with transformer winding insulation, a high-voltage circuit breaker provided with a combination switch and a gas-insulated metal pipe insulator, a medium-high voltage AC-DC bushing or a medium-high voltage AC-DC cable.
[0039]By magnetron sputtering coating or evaporation coating, a layer of magnesium oxide film with a thickness greater than 120nm is formed on the surface of the insulating material or metal conductor, and then, after the insulation covering of the high-voltage equipment current-carrying module module, it can be on the insulating material layer or A layer of dense magnesium oxide film is formed between the metal...
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