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Method for analyzing influence of beta-SiC transition layer on nucleation and growth of diamond film

A diamond film, diamond thin film technology, used in the analysis of materials, material excitation analysis, material analysis using wave/particle radiation, etc.

Inactive Publication Date: 2017-11-10
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Studies have shown that the deposition temperature is an important parameter affecting the surface morphology and structure of the magnetron sputtered β-SiC film. (ii) Effect of microstructure change of β-SiC transition layer on diamond nucleation and growth

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  • Method for analyzing influence of beta-SiC transition layer on nucleation and growth of diamond film
  • Method for analyzing influence of beta-SiC transition layer on nucleation and growth of diamond film
  • Method for analyzing influence of beta-SiC transition layer on nucleation and growth of diamond film

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Embodiment

[0035] In this embodiment, an intermediate frequency magnetron sputtering is used to deposit a SiC transition layer on a cemented carbide YG 8 (WC-Co 8%) substrate. By controlling the sputtering power of Si target (99.99%) and acetylene (C 2 h 2 ) gas flow to realize the reaction of Si element and C element. By adjusting the deposition temperature, β-SiC transition layers with different surface morphology and tissue characteristics were obtained. In this embodiment, SEM, XRD and Raman spectroscopy are used to study the influence of deposition temperature on the surface morphology and organizational characteristics of the magnetron sputtered β-SiC transition layer, and to explore the impact of low-temperature deposition on the surface morphology and organizational characteristics of the β-SiC transition layer on the morphology of diamond films. The influence of nucleation and growth, and the mechanism of β-SiC transition layer affecting diamond nucleation and growth. Include...

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Abstract

The invention discloses a method for analyzing the influence of a beta-SiC transition layer on the nucleation and growth of a diamond film. The method comprises the steps that a SiC transition layer is deposited on a hard alloy substrate by using the medium frequency magnetron sputtering technology, wherein beta-SiC transition layers different in surface morphology and texture characteristic are obtained by controlling the deposition temperature; the diamond film is deposited on the surface of the SiC transition layer through hot filament chemical vapor deposition; the surface morphology of a sample is observed by using a scanning electron microscope, the composition, the crystal orientation and the structure change of the transition layer are detected through X-ray diffraction, the purity and the internal stress change of the diamond film are characterized by using Raman spectra, and the mechanical property of the diamond film is tested through micro-indentation. In the method, by researching the influence of the deposition temperature on the surface morphology and the texture characteristic of the magnetron sputtering beta-SiC transition layer, and the influence of the surface morphology and the texture characteristic of the low-temperature deposited beta-SiC transition layer on the nucleation and the growth of the diamond film, the action mechanism that the nucleation and the growth of the diamond film are influenced by the beta-SiC transition layer is disclosed.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a method for analyzing the influence of a β-SiC transition layer on the nucleation and growth of a diamond film. Background technique [0002] Diamond coating on cemented carbide drilling tools is one of the few recognized tool coating solutions for interstellar drilling, but its application is limited by the low nucleation rate and combination of diamond thin films caused by transition layer lattice mismatch, thermal stress and process defects. problem of poor sex. Adding a suitable transition layer between cemented carbide and diamond film is the preferred method to prepare high-performance diamond film. In order to meet the needs of high reliability and long life of interstellar drilling diamond-coated tools, the diamond film transition layer needs to have: (i) effectively block the catalytic graphitization of the Co binder phase in the matrix; (ii) promote the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/22G01N23/207G01N21/65G01N3/08C23C14/54C23C14/06
CPCG01N23/22C23C14/0611C23C14/54G01N3/08G01N21/65G01N23/2076G01N2203/0019G01N2203/0078G01N2203/0282G01N2203/0641
Inventor 于翔刘飞任毅张震
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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