Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Non-resistance type reference source

A reference source, resistance-free technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of low power supply rejection ratio, high power supply rejection ratio, high power consumption, and achieve the effect of wide input range

Inactive Publication Date: 2017-10-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the common problems of high power consumption and low power supply rejection ratio in the reference sources in the prior art, the present invention proposes a non-resistive reference source, and the ultra-low power consumption sub-threshold reference source based on the sub-threshold MOSFET has a nanowatt capacity Level power consumption and wide frequency range high power supply rejection ratio PSRR characteristics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-resistance type reference source
  • Non-resistance type reference source
  • Non-resistance type reference source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0021] The non-resistive reference circuit diagram proposed by the present invention is as follows figure 1 Shown, including start-up circuit, bias current generation circuit and reference voltage generation circuit. The start-up circuit makes the entire reference source circuit leave the zero state when the power supply is established, exits after the start-up is completed, and the reference source circuit can work normally; the bias current generating circuit generates a current with positive temperature characteristics as the bias current of the reference voltage generating circuit; The reference voltage generation circuit uses threshold voltages with different negative temperature coefficients to obtain the final reference voltage VREF.

[0022] The bias current generation circuit includes a first NMOS transistor MN1, a second NMOS transi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a non-resistance type reference source, and belongs to the technical field of power supply management. The non-resistance type reference source comprises a starting circuit, a reference voltage generation circuit and a bias current generation circuit, wherein when a power supply is constructed, the starting circuit makes the reference source disengaged from a zero state and then retreats after starting is completed; a PMOS pipe with large threshold voltage negative temperature coefficient and an NMOS pipe with small negative temperature coefficient are selected, the negative temperature voltage in reference voltage is obtained through the threshold voltage difference of the PMOS pipe and the NMOS pipe, the positive temperature voltage is determined according to the thermal voltage, the sub-threshold slope factor and the related width-to-length ratio of the MOS pipe, and then the reference voltage VREF with good temperature characteristics can be obtained; bias currents with positive temperature characteristics are generated through the NMOS pope working in a sub-region, and the positive temperature characteristics of the currents can be enhanced when temperature rises. On the basis of traditional threshold reference, reference circuit branches are reduced, so power consumption of a reference circuit is reduced, and the power supply rejection ratio of the reference voltage is increased.

Description

technical field [0001] The invention belongs to the technical field of power supply management, and in particular relates to the design of a non-resistance reference source circuit, which has the characteristics of low voltage, low power consumption and high power supply rejection ratio PSRR. Background technique [0002] As the core module of the electronic system, the reference source is in many circuits such as analog-to-digital converter (ADC), digital-to-analog converter (DAC), linear regulator, switching regulator, temperature sensor, rechargeable battery protection chip and communication circuit. An indispensable part, providing an accurate and stable reference signal source for the circuit. As electronic systems, especially battery-powered or self-powered systems, such as environmental sensor networks, energy harvesting systems, bioelectronic systems, etc., have increasingly urgent requirements for low voltage and low power consumption, reduce the power consumption o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/26
CPCG05F3/26
Inventor 周泽坤曹建文汪尧余洪名鲁信秋王韵坤石跃张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products