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Hydrothermal preparation method of porous silicon material and preparation method of gas fluorescence sensor

A porous silicon and hydrothermal technology, which is applied in the growth of polycrystalline materials, analytical materials, fluorescence/phosphorescence, etc., can solve the problems of porous silicon being easily destroyed, insufficient luminous intensity, and silicon wafers being easily destroyed, and achieve good adsorption , high sensitivity and low cost

Active Publication Date: 2020-04-24
杭州芬得检测技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this method has the following disadvantages: 1. The porous silicon generated is easily destroyed
2. Silicon wafers are easily damaged during corrosion
Porous silicon with uniform surface pore size and stable luminescence has been obtained by this method, but the prepared porous silicon has a blue shift phenomenon and the luminous intensity is not enough

Method used

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  • Hydrothermal preparation method of porous silicon material and preparation method of gas fluorescence sensor
  • Hydrothermal preparation method of porous silicon material and preparation method of gas fluorescence sensor
  • Hydrothermal preparation method of porous silicon material and preparation method of gas fluorescence sensor

Examples

Experimental program
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Effect test

Embodiment 1

[0028] A hydrothermal preparation method of a porous silicon material, the preparation steps are as follows:

[0029] The monocrystalline silicon wafer is cleaned after soaking in ethanol and acetone; in this embodiment, the single crystal silicon wafer is a single-side polished P-type single crystal silicon wafer of 0.001-2Ω cm, and the cleaning method is ultrasonic cleaning for 10 minutes. Then rinse with distilled water repeatedly 3-5 times.

[0030] After cleaning, place the monocrystalline silicon wafer in the inner lining of the hydrothermal reaction kettle, and inject the corrosion solution into the inner lining; in this embodiment, 30-50ml of HF solution with a mass fraction of 40%, and a concentration of 0.3-1mol / L 5-20ml of zinc nitrate corrosion solution.

[0031] Put the inner liner in the shell of the hydrothermal reactor, cover and tighten it, put the hydrothermal reactor in an oven for heating reaction, the temperature is 140°C, and the time is 1-2 hours, afte...

Embodiment 2

[0036]Basically the same as Example 1, the difference is that the corrosion solution injected into the lining of the hydrothermal reaction kettle is 50ml of HF solution with a mass fraction of 30%, and 20ml of zinc nitrate with a concentration of 0.3mol / L; The temperature is 160°C, and the time is 1 hour; take out the monocrystalline silicon wafer and rinse it clean, soak it in 3% hydrogen peroxide for 2 days after washing, take it out and dry it; the polymer fluorescent material is poly[2-methoxy base-5-(3',7'-dimethyloctyloxy)-1,4-phenylethyn].

[0037] The technical effect of this embodiment is basically the same as that of Embodiment 1.

Embodiment 3

[0039] Basically the same as Example 1, the difference is that the corrosion solution injected into the lining of the hydrothermal reaction kettle is 60ml of HF solution with a mass fraction of 30%, and 10ml of zinc nitrate with a concentration of 1mol / L; The temperature is 130°C, and the time is 2 hours; after the reaction is completed and cooled to room temperature, the single crystal silicon wafer is taken out and rinsed. Poly[2,5-bis(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene].

[0040] The technical effect of this embodiment is basically the same as that of Embodiment 1.

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Abstract

The invention relates to a preparation method of fluorescence detection materials for explosives, in particular to a hydrothermal preparation method of a porous silicon material; the hydrothermal preparation method of the porous silicon material comprises the steps of washing a monocrystalline silicon wafer, fixing in a lining of a hydrothermal reactor, injecting a corrosive solution into the lining, wherein the corrosive solution is of 30-50% by mass of HF (hydrofluoric acid) solution and zinc nitrate solution having a concentration of 0.3-1 mol / L, and a volume ratio of the HF solution to the zinc nitrate solution is 2.5:1 to 6:1; adding the lining in a hydrothermal reactor housing, placing a hydrothermal reactor in an oven, carrying out hydrothermal reaction, cooling to room temperature after reacting, taking out the monocrystalline silicon wafer, flushing, soaking via hydrogen perioxide, and drying. The porous silicon material prepared by using the technical scheme has the advantages of high porosity, high luminous intensity, good surface pore uniformity and the like; a gas fluorescence sensor using the porous silicon prepared by using the technical scheme as a substrate has the advantages of high fluorescence intensity, good film-forming uniformity, high specific area, good absorption and the like.

Description

technical field [0001] The invention relates to a preparation method of a fluorescent detection material for explosives, in particular to a hydrothermal preparation method of a porous silicon material and a preparation method of a gas fluorescence sensor. Background technique [0002] As terrorist attacks intensify, terrorist activities have seriously threatened social security, people's property safety, and life safety. Therefore, if we can effectively detect explosives, it will be harmful to society, people's life safety, and property safety. provide greater protection. Various technologies such as police dogs, ion mobility spectrometry, X-ray imaging, and mass spectrometry are used to detect explosives. However, police dogs are limited in real life due to their work fatigue, radioactive sources, and large volume. usage of. The detection of hazardous chemicals by fluorescence quenching is an emerging technology, and its advantages of no radioactive source, small size, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/02G01N21/64C30B33/10C30B29/06
CPCC01B33/02C01P2004/01C01P2004/03C30B29/06C30B33/10G01N21/643
Inventor 程露丹张冉马辉
Owner 杭州芬得检测技术有限公司
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