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Method for preparing lanthanum cerium bromide crystals using a crystal growth device with adjustable temperature field

A technology of crystal growth and lanthanum bromide, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of not being able to better match crystals of different sizes, being easily affected by the external environment, and unsuitable for adjusting the temperature field, etc. problems, to achieve the effect of being conducive to mass production, reducing the internal stress of the crystal, and having a simple structure

Active Publication Date: 2018-05-08
厦门中烁光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional crucible descending method for growing lanthanum bromide crystals has the following disadvantages: (1) It involves a complete set of sophisticated descending system, which is easily affected by the external environment and requires professional maintenance and maintenance. The interface is constantly disturbed due to the descending process, resulting in internal stress; (2) Since the growth furnace is a fully enclosed structure, the temperature field should not be adjusted once it is built, and it cannot better match crystals of different sizes; (3) It takes up a lot of space, Maintenance is extremely inconvenient

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  • Method for preparing lanthanum cerium bromide crystals using a crystal growth device with adjustable temperature field
  • Method for preparing lanthanum cerium bromide crystals using a crystal growth device with adjustable temperature field

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Embodiment 2

[0038] Embodiment 2 temperature field adjustable static lanthanum cerium bromide crystal growth method

[0039] In this embodiment, the crystal growth device with adjustable temperature field is formed by stacking 11 layers of aluminum silicate insulation materials with a thickness of 5 cm and an inner diameter of 13 cm. From top to bottom, the outer diameter of the first layer is 40 cm, and the outer diameter of the second layer is The outer diameter of the third layer is 44cm, the outer diameter of the fourth, fifth, and sixth layers is 56cm, the outer diameter of the seventh layer is 46cm, the outer diameter of the eighth layer is 51cm, and the ninth layer The outer diameter of the tenth layer is 59cm, the outer diameter of the tenth layer is 65cm, and the outer diameter of the eleventh layer is 70cm. When charging, first cut the quartz crystal into long strip-shaped seed crystals along the C axis, with a size of 3mm×3mm×15mm, and the direction of the C axis is parallel to ...

Embodiment 3

[0041] Embodiment 3 temperature field adjustable static lanthanum cerium bromide crystal growth method

[0042] In this embodiment, the crystal growth device with adjustable temperature field is formed by stacking 12 layers of aluminum silicate insulation materials with a thickness of 5 cm and an inner diameter of 15 cm. From top to bottom, the outer diameter of the first layer is 40 cm, and the outer diameter of the second layer is The outer diameter of the third layer is 44cm, the outer diameter of the fourth, fifth, and sixth layers is 58cm, the outer diameter of the seventh layer is 45cm, the outer diameter of the eighth layer is 52cm, and the ninth layer The outer diameter of the tenth layer is 59cm, the outer diameter of the tenth layer is 65cm, the outer diameter of the eleventh layer is 70cm, and the outer diameter of the twelfth layer is 75cm. When charging, first cut the quartz crystal into long strip-shaped seed crystals along the C axis, with a size of 3mm×3mm×15mm...

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Abstract

The invention provides a method for preparing a cerium lanthanum bromide crystal by use of a crystal growing device with an adjustable temperature field. A thermal insulation material layer with adjustable size and easy to replace is adopted; only one-section heating is needed rather than crystal transformation or a platform raising / lowering system. By adjusting the size of the thermal insulation material layer, the temperature field of a furnace is suitable for growing the cerium lanthanum bromide crystal. According to the method provided by the invention, the crystal is grown through a totally static way without a moving mechanism. The shortcomings of traditional Bridgman-Stockbarger method such as high requirement on precision of a lowering system, difficulty batch copying due to relatively great difference of furnaces and much space occupation are overcome. Programmed growth of the cerium lanthanum bromide crystal is realized easily, the control on a growing surface of the cerium lanthanum bromide crystal is remarkably facilitated, the growing environment is stable, and the crystal defects can be effectively avoided. The crystal growing device is easy to prepare and convenient to maintain and clean.

Description

technical field [0001] The invention belongs to the field of deep processing of rare earth materials, and in particular relates to a method for preparing lanthanum cerium bromide crystals using a crystal growth device with adjustable temperature field. Background technique [0002] Scintillation crystals can be made into detectors, and have great application prospects in the fields of high-energy physics, nuclear physics, imaging nuclear medicine diagnosis, geological exploration, astrophysics, and safety inspection. With the rapid development of nuclear science and technology and other related technologies, its application fields are constantly expanding. Different application fields also put forward more and higher requirements for inorganic scintillators. Traditional NaI:TI, BGO and other scintillation crystals can no longer meet the special requirements of new application fields. [0003] Ce-doped lanthanum bromide crystal (LaBr 3 Since the discovery of :Ce in 1999, d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/02C30B29/12
CPCC30B11/02C30B29/12
Inventor 魏建德方声浩张志诚叶宁吴少凡龙西法
Owner 厦门中烁光电科技有限公司
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