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Method for preparing porous silicon carbide ceramic by discharging plasma sintering method

A porous silicon carbide, discharge plasma technology, applied in ceramic products, applications, household appliances, etc., can solve the problems of complex preparation methods and different experimental conclusions, and achieve the effect of simplifying the preparation process, uniform pore distribution, and three-dimensional interconnection of pore distribution.

Inactive Publication Date: 2017-05-31
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, judging from the referenced literature, because of different research methods and experimental conditions, the experimental conclusions obtained are also different, and there are large differences between them.
However, these methods all add different pore-forming agents and sintering aids, and the preparation methods are relatively complicated.

Method used

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  • Method for preparing porous silicon carbide ceramic by discharging plasma sintering method
  • Method for preparing porous silicon carbide ceramic by discharging plasma sintering method
  • Method for preparing porous silicon carbide ceramic by discharging plasma sintering method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Mix silicon carbide powder (average particle size 0.8 μm) and deionized water at a mass ratio of 1:20, perform magnetic stirring and ultrasonic dispersion at room temperature for 20 minutes to obtain a mixed slurry; then put the mixed slurry into a polymer Ball mill in a tetrafluoroethylene tank for 12 hours, the ball milling medium is silicon carbide balls, and the dispersant is deionized water; the slurry after ball milling is placed in a vacuum drying oven and dried at 80°C for 12 hours to obtain silicon carbide powder; the obtained powder After being ground and passed through a 100-mesh sieve, it is aged in the natural environment for 12 hours; then the aged powder is put into a mold with a diameter of 30mm, and the temperature is 1800°C under vacuum conditions (heating rate: before 1600°C is 100°C / min, 1600~1800°C heating rate is 30°C / min), sintering at 50MPa for 5min to obtain the product;

[0031] The product has a directional and interconnected pore structure, a...

Embodiment 2

[0033] Mix silicon carbide powder (average particle size 0.8 μm) and deionized water at a mass ratio of 1:20, perform magnetic stirring and ultrasonic dispersion at room temperature for 20 minutes to obtain a mixed slurry; then put the mixed slurry into a polymer Ball mill in a tetrafluoroethylene tank for 12 hours, the ball milling medium is silicon carbide balls, and the dispersant is deionized water; the slurry after ball milling is placed in a vacuum drying oven and dried at 80°C for 12 hours to obtain silicon carbide powder; the obtained powder After grinding and passing through a 100-mesh sieve, it was aged in the natural environment for 12 hours; then the aged powder was put into a mold with a diameter of 30mm, and the temperature was 1800°C under vacuum conditions (the heating rate was the same as in Example 1). , Sintering at 30MPa for 5 minutes to obtain the product; the product has a directional and interconnected pore structure, and the silicon carbide particles are...

Embodiment 3

[0035] Mix silicon carbide powder (average particle size 0.8 μm) and deionized water at a mass ratio of 1:20, perform magnetic stirring and ultrasonic dispersion at room temperature for 20 minutes to obtain a mixed slurry; then put the mixed slurry into a polymer Ball mill in a tetrafluoroethylene tank for 12 hours, the ball milling medium is silicon carbide balls, and the dispersant is deionized water; the slurry after ball milling is put into a vacuum drying oven and dried at 100°C for 6 hours to obtain silicon carbide powder; the obtained powder After grinding and passing through a 100-mesh sieve, it was aged in the natural environment for 12 hours; then the aged powder was put into a mold with a diameter of 30mm, and the temperature was 1800°C under vacuum conditions (the heating rate was the same as in Example 1). , Sintering for 10 minutes under the condition of 20MPa to obtain the product; the product has a directional and interconnected pore structure, and the silicon c...

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Abstract

The invention relates to a method for preparing porous silicon carbide ceramic by a discharging plasma sintering method, and belongs to the technical field of preparation of porous ceramic materials. The method comprises the following steps of mixing silicon carbide powder and deionized water, magnetically stirring, and dispersing by ultrasonic waves, so as to obtain a mixed slurry; performing ball grinding on the mixed slurry; putting the slurry after ball milling into a vacuum drying box to dry, so as to obtain the silicon carbide powder; grinding and screening the obtained silicon carbide, and aging under the natural environment; putting the aged powder into a die, and sintering for 5 to 15min at the temperature of 1600 to 1800 DEG C and pressure of 20 to 50MPa under the vacuum condition, so as to obtain a product. The method has the advantages that by utilizing the silicon carbide powder, under the condition of no adding of pore forming agent and sintering additive, the prepared porous silicon carbide ceramic has controllable size, high porosity, uniform pore distribution, and three-dimensional communication; a directional interconnection pore structure is realized, the opening porosity is 30 to 80%, the pore diameter is 0.1 to 10mu m, and the silicon carbide particles are connected by a liquid and solid sintering type.

Description

technical field [0001] The invention relates to a method for preparing porous silicon carbide ceramics by a spark plasma sintering method, and belongs to the technical field of porous ceramic material preparation. Background technique [0002] Porous ceramics have properties such as low density, large specific surface area, high permeability, high temperature resistance and chemical corrosion resistance, and are widely used as component materials such as filtration, separation, heat insulation, sound absorption, catalyst carrier, chemical sensor and bioceramics. Excellent performance and good application prospects. Silicon carbide porous ceramic is a ceramic material with both structural and functional properties. It not only has the excellent performance of ceramic matrix, but also has a large porosity and adjustable pore shape, pore size and distribution; It has matching excellent thermal, electrical, magnetic, optical and chemical properties. With the development of sci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B38/00C04B35/565C04B35/645
CPCC04B38/0054C04B35/565C04B35/645C04B38/0003C04B2235/6022C04B2235/6562C04B2235/6581C04B2235/661C04B2235/96C04B38/007C04B38/0074
Inventor 李庆刚王志黄世峰程新
Owner UNIV OF JINAN
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