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A kind of p-type camsno amorphous oxide semiconductor thin film and preparation method thereof

An amorphous oxide and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve large-area deposition, good material properties, and the effect of promoting development

Active Publication Date: 2020-03-03
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) With high purity CaO, Co 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 950°C to make a CaCoSnO ceramic sheet as a target, in which the atomic ratio of Ca, Co, and Sn is 3:4:1;

[0026] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to a vacuum degree of 9×10 -4 Pa;

[0027] (3) Pass into O 2 As the working gas, the gas pressure is 6Pa, and the substrate temperature is 500°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Ca 3 co 4 SnO 10 Amorphous thin film.

[0028] Using quartz as the substrate, p-type Ca was prepared according to the above growth steps 3 co 4 SnO 10 The film was tested for its structure, electrical and opt...

Embodiment 2

[0030] (1) With high purity CaO, Co 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1050°C to make a CaCoSnO ceramic sheet as a target, in which the atomic ratio of Ca, Co, and Sn is 3:4:1.5;

[0031] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to a vacuum degree of 9×10 -4 Pa;

[0032] (3) Pass into O 2 As the working gas, the gas pressure is 7Pa, and the substrate temperature is 400°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Ca 3 co 4 sn 1.5 o 10.5 Amorphous thin film.

[0033] Using quartz as the substrate, p-type Ca was prepared according to the above growth steps 3 co 4 sn 1.5 o 10.5The film was tested for its structure, ...

Embodiment 3

[0035] (1) With high purity CaO, Co 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1050°C to make a CaCoSnO ceramic sheet as a target, in which the atomic ratio of Ca, Co, and Sn is 3:4:2;

[0036] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to a vacuum degree of 9×10 -4 Pa;

[0037] (3) Pass into O 2 As the working gas, the gas pressure is 8Pa, and the substrate temperature is 300°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Ca 3 co 4 sn 2 o 11 Amorphous thin film.

[0038] Using quartz as the substrate, p-type Ca was prepared according to the above growth steps 3 co 4 sn 2 o 11 The film was tested for its structure, electrica...

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Abstract

The invention discloses a p-type CaMSnO amorphous oxide semiconductor thin film, wherein the valence of Ca is +2, M is one of VIIIB group transition metals Fe, Co and Ni, the valence of M is +3, and Ca and M are combined with O to form a p-type conductive substrate of the material; and the valence of Sn is +2, p-type conduction is also formed in the substrate at the same time, and the Sn is provided with a spherical electron orbit and highly overlapped with electron cloud in an amorphous state so as to play a role of a hole transmission channel. The invention further provides a method for preparing the p-type CaMSnO amorphous oxide semiconductor thin film, which comprises the steps of firstly preparing a CaCoSnO ceramic piece according to a sintering method, and preparing a p-type CaMSnO amorphous oxide semiconductor thin film by taking the CaCoSnO ceramic piece as a target material according to a pulse laser deposition method, wherein the hole concentration is in a range of 10<12>cm<-3> to 10<14>cm<-3>. The thin film prepared according to the method can be applied to a P-type amorphous thin-film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/10H01L29/12H01L29/786H01L21/203
CPCH01L21/203H01L29/1033H01L29/12H01L29/78693
Inventor 吕建国程晓涵叶志镇
Owner ZHEJIANG UNIV
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