Low-cost tantalum carbide coating preparation method

Abstract

The invention discloses a low-cost tantalum carbide coating preparation method. The method comprises the following steps that a matrix is pretreated at first, then, tantalum carbide, sintering aids, adhesives and solvents are adopted for preparing turbid liquid, the turbid liquid is uniformly sprayed or brushed to the surface of the matrix, and finally the matrix with the sprayed or brushed matrix is subjected to pre-temperature or sintering treatment, and a tantalum carbide coating with the uniform thickness and dense structure can be obtained on the matrix. The surface of the matrix is coated with the TaC coating with the completely dense structure, and the surface of the matrix can be isolated and protected to a large extent due to the coating; the method can be used for crystal and semiconductor production device or components, and the phenomenon that crystal defects are caused due to the fact that device or component surface layer particles enter crystals during crystal growth is avoided. Compared with the CVD deposition technology, the technological process is low in cost, and the method is simpler, easy to implement, good in repeatability and capable of directly forming the compact and crack-free coating on the surface of a material.

Description

Technical field [0001] The invention relates to the field of production and preparation of crystals and semiconductor materials, in particular to a method for preparing a low-cost tantalum carbide coating. Background technique [0002] Crystals, semiconductor production devices or components refer to crystals, semiconductor production bases, substrates, crucibles, heat pipes, temperature measuring tubes and other high-temperature and high-purity materials or components. Its purity and chemical stability are directly related to semiconductors. The purity, performance and quality of materials are therefore the key materials for crystal and semiconductor production. Compared with traditional silicon, the crystal growth of third-generation semiconductors such as SiC, GaN, and AlN requires a higher temperature (>2100°C) and a corrosive atmosphere. And in the process of physical vapor transport (PVT) crystal growth, the sublimated source powder (silicon, aluminum) has high reactivi...

AI Technical Summary

Problems solved by technology

The chemical vapor deposition (CVD) method is commonly used to prepare tantalum carbide. Its disadvantages are: high equipment and operating costs; cracks and pores are prone to appear in the coating. crystal protection

The main reason for the cracks is that the thermal expansion coefficient of the tantalum carbide coating is large, which is more than twice that of the high-purity graphite used in semiconductors. When the coating is thick, it is easy to crack and be scrapped.