Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A grinding and polishing method for superhard and brittle workpieces

A technology for ultra-hard and brittle workpieces, which is applied in the field of grinding and polishing of ultra-hard and brittle workpieces, can solve the problems of low quality, and achieve the effects of simple preparation, improved surface roughness, and small subsurface damage

Active Publication Date: 2019-02-12
HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of low processing efficiency in the grinding and polishing process of existing superhard and brittle materials, and to invent an abrasive with strong self-sharpening, simple process, low cost, stable and efficient processing efficiency, suitable for silicon carbide, A grinding and polishing method for superhard materials such as sapphire, which obtains aggregate abrasives with excellent self-sharpening properties by sintering small-grain abrasives, and then solidifies the sintered aggregates in the matrix to make a grinding and polishing pad, and adds acid to the grinding and polishing liquid Alkali modifier and chemical active ingredients to improve the grinding and polishing performance of super-hard and brittle materials, and at the same time add small particles of auxiliary abrasives to the grinding and polishing liquid to ensure uniform wear of the grinding and polishing pad and ensure a stable material removal rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A grinding method suitable for silicon carbide and sapphire. It first prepares diamond abrasive aggregates, adopts 10-15 μm particle size diamond crushing material with a weight ratio of 70:12:8, pre-sintered vitrified bond and copper powder to prepare diamond aggregates. The preparation method is: the above materials After the steps of mixing, gluing, drying, granulating, degumming, sintering and re-screening, the aggregate abrasive with a particle size of 2-20 μm is obtained.

[0026] The above-mentioned prepared aggregate abrasive and resin bond are in a ratio of 35:65 by weight (during specific implementation, the weight ratio of aggregate abrasive and resin bond can also be 70:30, 50:50 and 20:80, etc. ) were mixed, then poured into the prepared mold, and thermally induced to cure, demolded to obtain a grinding and polishing pad with protrusions in the shape of quadrangular prisms and arranged in a cycloidal shape, and post-cured for 2 hours.

[0027] The above-me...

Embodiment 2

[0029]A grinding method suitable for silicon carbide and sapphire. It first prepares diamond abrasive aggregates, using diamond with a weight ratio of 65:35 and pre-sintered low-temperature ceramic bond to prepare diamond aggregates. The original particle size of diamonds is 8-12 μm. The preparation method is: Mixing, gluing, drying, granulating, degumming, sintering, re-screening and other steps to obtain diamond aggregate abrasive grains with a particle size of 50-60 μm.

[0030] The above prepared aggregate large particles and copper powder are in a weight ratio of 44:60 (in practice, the ratio of aggregate large particles to copper powder can also be 75:25, 50:50 or 20:80) Mix, then put into pre-selected and prepared graphite molds, carry out hot pressing and sintering for 15 minutes, demould to obtain pellets with protrusions in the shape of pentagonal prisms, and bond them into a grinding pad with protrusions arranged in a radial shape.

[0031] The above-mentioned prep...

Embodiment 3

[0033] A polishing method suitable for silicon carbide and sapphire. It first prepares diamond abrasive aggregates. It first uses diamonds with a particle size of 3-5 μm in a weight ratio of 62:30:8, low-temperature ceramic pre-sintered bodies and copper powder to prepare diamond aggregate abrasive grains. The preparation method is: The above materials go through the steps of mixing, gluing, drying, granulating, degumming, sintering and re-screening to obtain diamond aggregate abrasives with a particle size of 40-50 μm.

[0034] Mix the above-mentioned large aggregate particles and resin in a ratio of 50:50 (in practice, the weight ratio of aggregate abrasive and resin binder can also be 70:30, 60:40 and 20:80, etc.), Then pour it into the prepared mold, perform hot pressing on a vulcanizing machine, and demould to obtain a grinding and polishing pad whose protrusions are in the shape of hexagonal prisms and the protrusions are arranged in a square lattice (lattice spacing: 2 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

A new grinding and polishing method for a super hard and brittle workpiece is characterized by mainly comprising the steps that firstly, diamond abrasive aggregate is prepared; secondly, pressing and forming are performed; and thirdly, grinding and polishing liquid is prepared to grind and polish the workpiece; a chemical active component added in the grinding and polishing liquid is a pH regulating agent or active ions; and a proper amount of small particle auxiliary abrasive is added in the grinding liquid to make a grinding and polishing pad uniformly abraded, and a stable material removing rate is guaranteed. The method has the beneficial effects of being simple in preparation, short in process route, high in rate of finished products, low in cost, stable in machining performance and the like.

Description

technical field [0001] The invention relates to a mechanical processing method, in particular to a mechanical processing method for superhard and brittle workpieces such as silicon carbide and sapphire whose Mohs hardness exceeds 9, specifically a grinding and polishing method for superhard and brittle workpieces Background technique [0002] Brittle materials such as silicon carbide and sapphire have a Mohs hardness exceeding 9, which is a class of superhard and brittle materials. With good mechanical properties, stable physical and chemical properties and excellent optical properties, it is widely used in military and civilian fields such as machinery, optics, information, aerospace and weaponry. However, due to the characteristics of high hardness and high brittleness of superhard materials such as silicon carbide and sapphire, the efficiency of conventional grinding and polishing is extremely low, and it is difficult to carry out large-scale and efficient production. Th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/00B24B37/11B24D18/00B24D3/06B24D3/14B24D3/28C09G1/02
CPCB24B37/00B24B37/11B24D3/06B24D3/14B24D3/28B24D18/0009C09G1/02
Inventor 朱永伟王占奎朱楠楠沈琦王子琨郑方志陈佳鹏李军左敦稳
Owner HUBEI DINGHUI MICROELECTRONICS MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com