Semiconductor structure and method for forming same

Abstract

A semiconductor structure and a method for forming the same are provided. The method for forming the semiconductor structure comprises steps of: providing a substrate and a first dielectric layer on the surface of the substrate; forming an opening penetrating through the first dielectric layer; forming a first metal layer fully filling the opening and a second metal layer on the top surface of the first metal layer; forming a first graphene layer on the top surface and the sidewall surface of the second metal layer; forming a second dielectric layer on the top surface of the first dielectric layer, the top surface and the sidewall surface of the first graphene layer; grinding to remove the first graphene layer and the second dielectric layer higher than the top surface of the second metal layer until the top surface of the second metal layer is exposed; and forming a second graphene layer on the top surface of the exposed second metal layer. The method reduces the resistance of the semiconductor structure and improves the electrical performance of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous advancement of VLSI process technology, the feature size of semiconductor devices has been continuously reduced, and the performance of semiconductor devices has become stronger and stronger. The integration level of integrated circuit chips has reached hundreds of millions or even billions of devices. The above multilayer interconnection techniques are widely used. [0003] The traditional interconnection structure is made of aluminum metal, but as the size of semiconductors continues to shrink, smaller and smaller interconnection structures carry higher and higher currents, and the response time requirements of interconnection structures are getting higher and higher. The shorter, the traditional aluminum interconnect structure can no longer meet the re...

AI Technical Summary

Problems solved by technology

[0004] Although the use of copper metal as the material of the interconnect structure in the semiconductor structure can improve the performance of the semiconductor structure to a certain extent, the performance of the semiconductor structure still needs to be improved

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