Formation method and structure of a double gate fin field effect transistor

Abstract

The invention provides a double gate fin type field effect transistor forming method and a structure thereof. One side of the lower part of a fin forms a gate which serves as a control gate, and the upper part of the fin forms the other gate which serves as a drive gate. The method can reduce electricity leakage of the effective channel bottom part of the fin, can effectively change a threshold voltage of the drive gate by adjusting the thickness of the control gate, and can increase device properties.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for forming a double gate fin field effect transistor and its structure. Background technique [0002] In the process of manufacturing FinFET, the ion implantation process is the main link. The ion implantation process is a material modification method that introduces dopant atoms into a solid. Simply put, the process of ion implantation is to irradiate the atoms to be doped with accelerated ions in a vacuum system (implantation ) solid material to form a surface layer (implanted layer) with specific properties in the selected (i.e. injected) area. [0003] At present, a variety of double gate fin field effect transistor (double gate) structures have been proposed. The source (Source) and drain (Drain) parts of these double gate fin field effect transistors look like fish fins, and the gate The pole (gate) is different from the previous circuits on the s...

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Problems solved by technology

[0005] However, in the actual manufacturing process, on the one hand, because the ion implantation process is difficult to distribute evenly in the vertical direction of the fin (fin), even if there are differences between the upper and lower parts of the fin

On the other hand, the effective channel bottom leakage of the fin is higher

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