One-step wet black silicon preparation and surface treatment method
A surface treatment, black silicon technology, applied in the field of solar cells, can solve problems such as increased leakage, affecting direct industrial application, and drop in open-circuit voltage of solar cells, achieving low battery leakage rate, solving the bottleneck of mass industrialization, and low cost. Effect
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Embodiment 1
[0057] Wet black silicon preparation and surface treatment method comprises the following steps:
[0058] (1) De-damage layer: Select a P-type polysilicon wafer (boron-doped, 1-3Qcm, 156X156mm square, thickness 180μm). Since the polysilicon wafer is cut with a diamond wire saw, it is necessary to perform alkali etching on the silicon wafer to remove damage Floor;
[0059] (2) Preparation of black silicon: Rinse the product wafer of step (1) with deionized water; after blowing dry, put it into the corrosion solution and react for 200 seconds at room temperature to prepare black silicon; wherein, the corrosion solution is metal ion-containing Mixed aqueous solution of concentrated hydrofluoric acid, oxidant and polymer; metal ions are derived from HAuCl 4 and AgNO 3 The combination of HAuCl4 and AgNO3 are electronic grade products, the weight ratio of HAuCl4 and AgNO3 is 1:6, the total content of HAuCl4 and AgNO3 in the solution is 0.01mol / L; the oxidant is hydrogen peroxide; ...
Embodiment 2
[0065] Wet black silicon preparation and surface treatment method comprises the following steps:
[0066] (1) De-damage layer: Select a P-type polysilicon wafer (boron-doped, 1-3Qcm, 156X156mm square, thickness 180μm). Since the polysilicon wafer is cut with a diamond wire saw, it is necessary to perform alkali etching on the silicon wafer to remove damage Floor;
[0067] (2) Preparation of black silicon: Rinse the product wafer of step (1) with deionized water; after blowing dry, put it into the corrosion solution and react for 200 seconds at room temperature to prepare black silicon; wherein, the corrosion solution is metal ion-containing Mixed aqueous solution of concentrated hydrofluoric acid, oxidant and polymer; metal ions are derived from HAuCl 4 and AgNO 3 The combination of HAuCl4 and AgNO3 are electronic grade products, the weight ratio of HAuCl4 and AgNO3 is 1:5, the total content of HAuCl4 and AgNO3 in the solution is 0.007mol / L; the oxidant is hydrogen peroxide;...
Embodiment 3
[0073] Wet black silicon preparation and surface treatment method comprises the following steps:
[0074] (1) De-damage layer: Select a P-type polysilicon wafer (boron-doped, 1-3Qcm, 156X156mm square, thickness 180μm). Since the polysilicon wafer is cut with a diamond wire saw, it is necessary to perform alkali etching on the silicon wafer to remove damage Floor;
[0075] (2) Preparation of black silicon: Rinse the product wafer of step (1) with deionized water; after drying, put it into the corrosion solution and react for 300 seconds at 10°C to prepare black silicon; wherein, the corrosion solution contains metal ions The mixed aqueous solution of concentrated hydrofluoric acid, oxidant and high molecular polymer; the metal ion is derived from the combination of potassium chloroplatinate and palladium acetate, both of which are electronic grade products, potassium chloroplatinate and palladium acetate The weight ratio is 1:5, and the total content of potassium chloroplatina...
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