Gan thin film grown on yttrium aluminum garnet substrate and its preparation method and application

Abstract

The invention discloses a GaN film growing on a yttrium aluminum garnet substrate. The GaN film growing on the yttrium aluminum garnet substrate comprises the yttrium aluminum garnet substrate and a GaN film, wherein the GaN film grows on the yttrium aluminum garnet substrate in an epitaxial mode; the yttrium aluminum garnet substrate takes a surface (111) deflecting from a surface (100) by 0.5 to 1 degree as an epitaxial surface, and the orientation relation between the yttrium aluminum garnet substrate and the GaN film is that a surface (0001) of the GaN film is parallel to a surface (111) of the yttrium aluminum garnet substrate. The crystal quality of the GaN film is good. The invention further discloses a preparation method of the GaN film growing on the yttrium aluminum garnet substrate. The preparation method is simple in technology and low in preparation cost. Besides, the GaN film growing on the yttrium aluminum garnet substrate is also applied to an LED device, a photoelectric detector and a solar battery device.

Description

technical field [0001] The invention relates to the technical field of GaN thin films, in particular to a GaN thin film grown on a yttrium aluminum garnet substrate and a preparation method and application thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source, is considered to be a green lighting source in the 21st century due to its advantages of low calorific value, low power consumption, fast response, long life, and small size. Facing the market demand for high-power lighting in the future, the luminous efficiency of LED still needs to be further improved if it is to be widely used on a large scale. At present, LED chips are mainly prepared by GaN material systems grown on sapphire substrates. However, due to the lattice mismatch between sapphire and GaN as high as 13.3%, resulting in a density of ~10 9 cm -2 The dislocation defects of the material reduce the carrier mobility of the material and shorten the car...

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Problems solved by technology

However, due to the lattice mismatch between sapphire and GaN as high as 13.3%, resulting in a density of ~10 9 cm -2 dislocation defects, thereby reducing the carrier mobility of the material and shortening the carrier lifetime, which in turn affects the performance of GaN-based devices

Secondly, due to the low thermal conductivity of sapphire (25W / m K at 100°C), it is difficult to discharge the heat generated in the chip in time, resulting in heat accumulation, which reduces the internal quantum efficiency of the device and ultimately affects the performance of the device

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