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Nitrogen oxide fluorophor with anti-static function, preparation method and light-emitting device thereof

A nitrogen oxide and anti-static technology, which is applied in the field of nitrogen oxide phosphors and its preparation, can solve problems such as defects and reduce luminous performance, and achieve the effects of improved anti-static performance, high luminous efficiency, and high-efficiency luminous performance

Active Publication Date: 2016-09-28
JIANGSU BREE OPTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The nitride phosphor also has obvious disadvantages: in the synthesis process of the nitride phosphor, the oxides of Se and Te elements are added to the matrix crystal elements in the form of flux, so that Se and Te elements enter the matrix crystal lattice, Cause defects in the crystal of the nitride phosphor, thereby reducing the luminous performance

Method used

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  • Nitrogen oxide fluorophor with anti-static function, preparation method and light-emitting device thereof
  • Nitrogen oxide fluorophor with anti-static function, preparation method and light-emitting device thereof
  • Nitrogen oxide fluorophor with anti-static function, preparation method and light-emitting device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Weigh 49.37g of Ca 3 N 2 , 40.98g of AlN, 46.76g of Si 3 N 4 , 0.176g of Eu 2 o 3 , the above raw materials were fully mixed in a nitrogen atmosphere for 3 hours, put into a molybdenum crucible, and then quickly moved into a carbon tube furnace, and then gradually heated up to 1780°C under the protection of a nitrogen atmosphere, kept for 12 hours, and then naturally cooled to room temperature. Grinding and sieving to obtain the precursor intermediate of the nitrogen oxide phosphor. Weigh 0.004g of SeO 2 Fully mixed with the precursor intermediate of the above-mentioned phosphor, and then placed in a nitrogen-filled microwave oven for the second temperature-variable roasting, wherein: the first-stage roasting temperature is 1300 ° C, and the roasting time is 1 hour; the second-stage roasting temperature is 1450 ° C, roasting After 3 hours, the temperature was naturally lowered to room temperature, and then crushed, washed, dried, and sieved to obtain the final bod...

Embodiment 2

[0044] Weigh 39.53g of Ca 3 N 2 , 9.46g of Sr 3 N 2 , 32.79g of AlN, 55.65g of Si 3 N 4 , 17.59g of Eu 2 o 3 , the above raw materials were fully mixed in a nitrogen atmosphere for 3 hours, put into a molybdenum crucible, and then quickly moved into a carbon tube furnace, and then gradually heated up to 1700°C under the protection of a nitrogen atmosphere, kept for 24 hours, and then naturally cooled to room temperature. Grinding and sieving to obtain the precursor intermediate of the nitrogen oxide phosphor. Weigh 1.11g of SeO 2 Fully mixed with the precursor intermediate of the above-mentioned phosphor, and then placed in a nitrogen-filled microwave oven for the second variable-temperature roasting, wherein: the first-stage roasting temperature is 1300°C, and the roasting time is 0.5 hours; the second-stage roasting temperature is 1500°C, and the roasting time is The time is 0.5 hours, and then the temperature is lowered to room temperature, and the final body of nit...

Embodiment 3

[0050] Weigh 4.94g of Ca 3 N 2 , 75.7g of Sr 3 N 2 , 7.33g of Ba 3 N 2 , 49.18g of AlN, 36.47g of Si 3 N 4 , 8.8g of Eu 2 o 3 , the above raw materials were fully mixed in a nitrogen atmosphere for 3 hours, put into a molybdenum crucible, and then quickly moved into a carbon tube furnace, and then gradually heated up to 1900 °C under the protection of a nitrogen atmosphere, kept for 1 hour, and then naturally cooled to room temperature. Grinding and sieving to obtain the precursor intermediate of the nitrogen oxide phosphor. Weigh 2.22g of SeO 2 Fully mixed with the precursor intermediate of the above-mentioned phosphor, and then placed in a nitrogen-filled microwave oven for the second variable-temperature roasting, wherein: the first-stage roasting temperature is 1200°C, and the roasting time is 5 hours; the second-stage roasting temperature is 1400°C, and the roasting time is After 3 hours, the temperature was lowered to room temperature, crushed, washed, dried, a...

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Abstract

The invention relates to a nitrogen oxide fluorophor with the anti-static function. The nitrogen oxide fluorophor is characterized by comprising an inorganic compound with the anti-static function, wherein the inorganic compound comprises an anti-static material, a matrix material and a light-emitting material, elements of the matrix material and elements of the light-emitting material are subjected to solid solution to form a precursor midbody of the nitrogen oxide fluorophor, and the surface of the precursor midbody of the Nitrogen oxide fluorophor and the elements of the anti-static material are subjected to solid solution to form the final nitrogen oxide fluorophor. The nitrogen oxide fluorophor has the high anti-static effect, is good in chemical stability and applicable to various light-emitting devices. The preparation method adopts dual technologies and a two-stage method, and is simple, reliable and applicable to industrial batch production and manufacturing.

Description

technical field [0001] The invention belongs to the technical field of LED phosphors and light-emitting devices, and in particular relates to a nitrogen oxide phosphor with antistatic function that can be effectively excited by ultraviolet light, purple light or blue light, a preparation method thereof and a light-emitting device. Background technique [0002] In the context of global energy shortage, LED lighting products have attracted much attention. With the rapid development of white LED technology, the replacement of traditional lighting sources and backlights is accelerating, and semiconductor lighting will be popularized rapidly. At the same time, general lighting and high-end displays are also developing towards higher light efficiency, higher stability and higher light color quality. The packaging structure of white light LED will also evolve and develop from the LAMP type, SMD type and COB type based on traditional front-mounted chips to the CSP or WLP type struct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/80H01L33/50
CPCC09K11/0883C09K11/88H01L33/502
Inventor 何锦华梁超符义兵李树亚
Owner JIANGSU BREE OPTRONICS CO LTD
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