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Fast recovery diode and manufacturing method thereof

A technology for recovering diodes and diodes, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problems of insignificant changes in local life mode, hardening of device recovery characteristics, and reduction of capture coefficients. The effects of surge and dynamic avalanche capability, soft recovery characteristics, and fast recovery characteristics

Inactive Publication Date: 2016-06-22
STATE GRID CORP OF CHINA +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the electron irradiation method, in addition to hardening the recovery characteristics of the device, it will also cause the problem of large reverse leakage and small avalanche resistance; and for heavy metal gold or platinum, the method of gold doping is only used for devices below 600V due to large leakage. The platinum-doped method has the advantage of small leakage, but its process is difficult to control, and increasing the annealing temperature will easily lead to the risk of device inversion
Moreover, the capture coefficient of the platinum recombination center decreases as the temperature rises, so the device exhibits a negative temperature coefficient, while the electron irradiation mode is just the opposite, and the change in the local lifetime mode is not obvious

Method used

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  • Fast recovery diode and manufacturing method thereof
  • Fast recovery diode and manufacturing method thereof

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Embodiment

[0038] A. Initial oxidation: After cleaning the uniformly doped N-type silicon substrate, pass through the atmosphere of H2 and O2, in the temperature range of 900°C-1100°C, oxidation time of 1-10 hours, on the substrate An oxide layer 3 with a thickness of 8000-20000 angstroms is grown on the surface of the silicon wafer; figure 1 shown;

[0039] B. Forming the active area: on the uniformly doped N-type silicon substrate, the active area window is formed by applying glue, exposing, developing, etching, and removing the glue; figure 2 shown;

[0040] C. Forming a PN junction: In order to prevent implantation damage, a 300-500 Angstrom oxide layer is grown on the window of the active region as a masking layer, and the subsequent dose is 1e13cm -2 ~1e15cm -2 Boron ion implantation to form a boron ion implantation layer, and a 1-10um P+ region is formed under a nitrogen atmosphere at 1200°C; image 3 shown;

[0041]D. Forming a local lifetime control layer: use aluminum or ...

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Abstract

The invention relates to a fast recovery diode and a manufacturing method thereof. The diode comprises a substrate and a P+ region. The P+ region is formed on the substrate, and forms a PN junction together with the substrate, wherein the substrate is the cathode of the diode, and the P+ region is the anode of the diode. Hydrogen or helium is injected into the surface of the anode P+ region to form a local service life control layer. The fast recovery diode provided by the invention has the characteristic of fast and soft recovery. Because of existence of the local service life control layer, the fast recovery diode does not need too many global composite centers, electric leakage of the device is reduced, and the avalanche tolerance of the device is improved. Through electron irradiation and platinum doping, a device with a minor positive temperature coefficient of forward voltage drop is realized, and parallel connection is facilitated. Structures and doping of the diode anode and diode cathode can be adjusted. Forward surging and dynamic avalanche resistance are improved.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a fast recovery diode and a manufacturing method thereof. Background technique [0002] The power system requires high reliability and long life of the device. Compared with consumer and industrial FRDs, it requires fast shutdown, large enough softness factor, anti-surge current and anti-dynamic avalanche. The reverse recovery time Trr of the fast recovery diode is composed of two parts, that is, Trr=ta+tb, ta is the storage time, that is, the establishment time of the space charge region, and tb is the recombination time, that is, after the establishment of the space charge region, the excess in the drift region The time for the minority carriers to recombine, the softness factor S is usually defined as tb / ta. At present, fast recovery diode devices mainly use electron irradiation or heavy metal doping to achieve minority carrier lifetime control. Due...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329H01L21/266
Inventor 吴迪刘钺杨何延强金锐温家良
Owner STATE GRID CORP OF CHINA
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