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High-gain X ray detector based on double-heterojunction HEMT

A double heterojunction, high-gain technology, applied in the field of X-ray detectors, can solve the problems of slow time and low X-ray absorption efficiency, and achieve the effect of eliminating time response, making up for low X-ray absorption efficiency, and high current gain

Active Publication Date: 2016-06-15
HANGZHOU DIANZI UNIV
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Problems solved by technology

[0006] Aiming at the problem of low X-ray absorption efficiency of GaN thin film material and correspondingly slow time, the present invention proposes an X-ray dose detector based on AlGaN / GaN / AlGaN double heterojunction HEMT

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[0016] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] The X-ray detector of the present invention is based on AlGaN / GaN / AlGaN double heterojunction HEMT, such as figure 1 As shown, it is a schematic diagram of the detector structure, including: AlGaN barrier layer (1), GaN channel layer (2), AlGaN back barrier buffer layer (3), substrate (4), Si 3 N 4 Passivation layer (5), and gate (6), source (7), and drain (8).

[0018] figure 1 The device structure shown has a channel length of 1 micron and a width of 1 micron, and each layer is not doped. The AlGaN barrier layer (1) contains a linear gradient of AlN composition, the AlN composition at the top of the barrier layer is 30%, the AlN composition at the bottom and the GaN channel layer (2) contact surface is 0%, and the thickness of the barrier layer is 20 nanomet...

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Abstract

The invention discloses a high-gain X ray detector based on a double-heterojunction HEMT. The high-gain X ray detector comprises an AlGaN barrier layer, a GaN channel layer, an AlGaN back barrier buffer layer, a substrate, a Si3 N4 passivation layer, a grid electrode, a source electrode and a drain electrode. Cavity accumulation in the irradiation process happens to the interface between the channel layer and the back barrier buffer layer in the detector structure, so that the barrier height is lowered, the electron current of a channel changes, and finally an extremely high current gain is generated. The X ray detector is based on a GaN-based material system, the ionising radiation resistance is high, and the current gain is extremely high, so that the defect that the absorption rate of the GaN material to X rays is low is overcome, and the problem that the response time of a conventional GaN schottky X ray detector is solved.

Description

technical field [0001] The invention relates to an X-ray detector, in particular to an X-ray detector with high current gain based on an AlGaN / GaN / AlGaN double heterojunction high electron mobility transistor. Background technique [0002] X-ray dose detectors play an important role in many fields such as space exploration, nuclear facility monitoring, radiation therapy and biomedicine. The main types of detectors are Geiger counter tubes, thermoluminescent detectors, scintillator detectors and semiconductor detectors. . With the advancement of science and technology, semiconductor detectors have shown great development prospects and value due to their technical advantages of small size, low cost, and high sensitivity. [0003] Traditional semiconductor X-ray detectors are mainly based on silicon materials. Long-term irradiation of high-energy rays will produce lattice defects in silicon materials, and the energy level formed by the defects in the middle of the forbidden b...

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Application Information

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IPC IPC(8): H01L31/0304H01L31/119
CPCH01L31/03048H01L31/119
Inventor 王颖曹菲项智强于成浩
Owner HANGZHOU DIANZI UNIV
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