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A method for preparing high crystallinity perovskite thin films in air

A high-crystallinity, perovskite technology, applied in electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of reducing the crystallinity of perovskite films, poor performance, expensive instruments, etc., to improve reliability Reproducibility, reduce preparation cost, and improve the effect of flatness

Inactive Publication Date: 2018-05-15
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to reduce the dependence of perovskite films on equipment, thereby reducing the production cost of perovskite films, the researchers proposed a preparation process that uses doping to improve the stability of perovskite films, but its performance is far inferior to that of pure perovskite films. Ore film, the reason is that the crystallinity of the perovskite film is reduced
In order to protect the integrity of the perovskite film, some other researchers have proposed to deposit a layer of hydrophobic material on the perovskite film, but these studies are based on expensive instruments

Method used

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  • A method for preparing high crystallinity perovskite thin films in air
  • A method for preparing high crystallinity perovskite thin films in air
  • A method for preparing high crystallinity perovskite thin films in air

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Step 1: Clean the FTO glass sequentially with glass cleaner, acetone, and ethanol for 20 minutes, and then dry it in an oven;

[0034] Step 2: Dissolve lead iodide in N,N-dimethylformamide solution, heat to 70°C and stir for 6 hours to obtain 1M lead iodide / N,N-dimethylformamide solution;

[0035] Step 3: Dissolve methylamine iodide in isopropanol solution, heat to 70°C, and keep warm for 2 hours to obtain 10 mg / ml methylamine iodide / isopropanol solution;

[0036] Step 4: Spin-coat the lead iodide N,N-dimethylformamide solution prepared in step 2 on the conductive substrate dried in step 1 at 3000 rpm, and anneal at 70°C for 10 minutes to obtain a uniform film with a thickness of 300nm. Lead iodide film;

[0037] Step 5: Place the lead iodide film prepared in step 4 on the heating platform, quickly cover the sample with a petri dish, then drop 50 μL dimethyl sulfoxide on the edge of the petri dish, and treat at 70°C for 10 minutes;

[0038] Step 6: Spin-coat the methy...

Embodiment 2

[0040] Step 1: Clean the FTO glass sequentially with glass cleaner, acetone, and ethanol for 20 minutes, and then dry it in an oven;

[0041] Step 2: Dissolve lead bromide in N,N-dimethylformamide solution, heat to 70°C and stir for 6 hours to obtain 1mol / L lead bromide / N,N-dimethylformamide solution;

[0042] Step 3: Dissolve methylamine bromide in isopropanol solution, heat to 70°C, and keep warm for 2 hours to obtain 10mg / ml methylamine bromide / isopropanol solution;

[0043] Step 4: Spin-coat the lead bromide N,N-dimethylformamide solution prepared in step 2 on the conductive substrate dried in step 1 at 3000 rpm, and anneal at 70°C for 10 minutes to obtain a uniform film with a thickness of 300nm. Lead bromide film;

[0044] Step 5: Place the lead bromide film prepared in step 4 on the heating platform, quickly cover the sample with a petri dish, then drop 50 μL dimethyl sulfoxide on the edge of the petri dish, and treat at 70°C for 10 minutes;

[0045] Step 6: Spin-coat...

Embodiment 3

[0047] Step 1: Clean the FTO glass sequentially with glass cleaner, acetone, and ethanol for 20 minutes, and then dry it in an oven;

[0048] Step 2: Dissolve lead iodide in N,N-dimethylformamide solution, heat to 70°C and stir for 6 hours to obtain 1mol / L lead iodide / N,N-dimethylformamide solution;

[0049] Step 3: Dissolve methylamine iodide in isopropanol solution, heat to 80°C, and keep warm for 1 hour to obtain 10 mg / ml methylamine iodide / isopropanol solution;

[0050] Step 4: Spin-coat the lead iodide N,N-dimethylformamide solution prepared in step 1 on the conductive substrate dried in step 1 at 2000 rpm, and anneal at 80°C for 10 minutes to obtain a uniform film with a thickness of 500nm. Lead iodide film;

[0051] Step 5: Place the lead iodide film prepared in step 4 on the heating platform, quickly cover the sample with a petri dish, then drop 50 μl dimethyl sulfoxide on the edge of the petri dish, and treat at 70°C for 20 minutes;

[0052] Step 6: spin-coat the me...

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Abstract

The invention relates to a method for preparing a high-crystallinity perovskite film in air, comprising: dissolving lead halide in N,N-dimethylformamide to obtain lead halide / N,N-dimethylformamide solution; dissolve methylamine halide in isopropanol to obtain methylamine halide / isopropanol solution; spin-coat lead halide / N,N‑dimethylformamide solution onto a conductive substrate and anneal at 60‑80 °C for 10 ‑20 minutes to get the lead halide film, put it on the heating platform, quickly cover the sample with a petri dish, then drop dimethyl sulfoxide on the edge of the petri dish, treat at 60‑80 °C for 10‑20 minutes, spin coating Methylamine halide / isopropanol solution, quickly cover the sample with a Petri dish, anneal at 90-110°C for 10-20 minutes, and obtain it. The method of the invention effectively improves the flatness of the surface of the perovskite film, effectively ensures the perovskite film, significantly improves the repeatability of devices, and reduces the preparation cost of the perovskite film.

Description

technical field [0001] The invention belongs to the field of perovskite solar battery preparation, in particular to a method for preparing a high-crystallinity perovskite thin film in air. Background technique [0002] Due to its excellent photoelectric effect, perovskite film has developed rapidly in recent years, especially in the field of solar cells. Its photoelectric conversion efficiency has exceeded 20%. The thickness of perovskite film is as thin as less than 1 micron. In the field of lighting technology, Perovskite has high carrier mobility and can emit light of different colors, which has a high application prospect. [0003] In order to further realize the needs of the industrialization of perovskite thin films, the preparation of efficient and stable perovskite thin films has become the goal pursued by the world's scientific community. In order to reduce the dependence of perovskite films on equipment, thereby reducing the production cost of perovskite films, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/48
CPCH10K71/12H10K71/15H10K71/441Y02E10/549
Inventor 张青红熊浩李耀刚王宏志侯成义
Owner DONGHUA UNIV
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