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In-situ synthesis of cadmium oxide nanometer gas-sensitive element with secondary pore structure

An in-situ synthesis, cadmium oxide technology, applied in the field of gas sensing elements, can solve the problems of in-situ synthesis of gas sensing elements, such as less research, complex preparation process, poor ether selectivity, etc. selective effect

Inactive Publication Date: 2016-05-04
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems that the existing two-dimensional materials are easy to agglomerate when used as gas-sensing materials, and there are few studies on in-situ synthesis of gas-sensing devices, especially the complex preparation process of ether detection devices and poor selectivity to ether. Zinc oxide nanorod arrays are used as the seed layer, and cadmium nanosheet arrays are grown on the zinc oxide nanorod seed layer by chemical vapor deposition, and cadmium oxide nanosheet arrays with secondary hole structure are oxidized in air, and then synthesized in situ Gas sensor, realizing a gas sensor with high selectivity to ether and short response time

Method used

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  • In-situ synthesis of cadmium oxide nanometer gas-sensitive element with secondary pore structure
  • In-situ synthesis of cadmium oxide nanometer gas-sensitive element with secondary pore structure

Examples

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Embodiment 1

[0030] (1) Synthesis of ZnO nanorod array seed layer

[0031] ①Using ethylene glycol monomethyl ether as a solvent, prepare a mixed solution of zinc acetate at a concentration of 0.1M and ethanolamine at a concentration of 0.2M; immerse the glass slide in the above solution for 30 seconds, and then place the glass slide base in an oven Drying treatment; after repeating the above operation twice, anneal the above glass slide substrate in air at 500°C for 1 hour, so that the seed layer is in firm contact with the glass slide substrate;

[0032] ② Using deionized water as a solvent, prepare a mixed solution of 0.025M zinc nitrate and 0.025M hexamethylenetetramine;

[0033] Take 80ml of the above mixed solution in the reaction kettle, and put the above glass slide substrate into the reaction kettle filled with the mixed solution, with the side with the seed layer facing down, and the height of the mixed solution is just below the substrate;

[0034] ③Put the reaction kettle in an...

Embodiment 2

[0042] The present embodiment is similar to embodiment 1, and the difference is: the oxidation temperature of cadmium oxide in step (2) 3. is 360 ℃, by figure 2 -a It can be seen that at this working temperature, the morphology of the obtained cadmium oxide is a complete nanosheet array. At this oxidation temperature, under the same conditions, the sensitivity of the bilayer structure to ether is 36%, and the response and recovery time are 22s and 51s, respectively.

Embodiment 3

[0044] This example is similar to Example 1, except that the oxidation temperature of cadmium oxide in step (2)③ is 440°C. Depend on figure 2 -c It can be seen that at this working temperature, the morphology of the obtained cadmium oxide is spongy cadmium oxide. At this temperature, under the same conditions, the sensitivity of the bilayer structure to ether is 43%, and the response and recovery time are 44s and 57s, respectively.

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Abstract

The invention discloses a cadmium oxide nanometer gas-sensitive element with a secondary pore structure. The cadmium oxide nanometer gas sensitive element is synthesized through the following steps: with ethylene glycol monomethyl ether as a solvent, preparing a mixed solution of 0.1 M of zinc acetate and 0.2 M of ethanolamine, soaking a glass slide into the mixed solution, and carrying out annealing treatment; preparing a mixed solution of 0.025 M of zinc nitrate and 0.025 M of hexamethylene tetramine, soaking the above-mentioned glass slide into the mixed solution, and carrying out heat-preserving so as to obtain a nanorod array of zinc oxide, wherein the nanorod array is used as a seed layer for growing cadmium oxide; placing cadmium sulfide (CdS) powder into an evacuated tubular furnace, placing an above-mentioned zinc oxide-grown substrate at a position 30 cm below the cadmium sulfide (CdS) powder, then introducing nitrogen and air, carrying out heating to 650 DEG C so as to obtain a nanosheet array of cadmium (Cd), and carrying out heat-preserving at 360 to 440 DEG C for 30 min so as to obtain a nanometer structure of cadmium oxide; and cutting the glass slide into a rectangular shape with a size of 0.5 cm * 1.0 cm, and carrying out coating with electrodes so as to prepare the gas-sensitive element. The gas-sensitive element provided by the invention has the following advantages: at a temperature of 215 DEG C, sensitivity to diethyl ether with a concentration 100 ppm is 138%, and response time and recovery time are 15 seconds and 27 seconds, respectively; meanwhile, the synthetic process is simple, safe and controllable, has low cost and is applicable to large-scale production.

Description

technical field [0001] The invention relates to a gas sensor, in particular to a cadmium oxide nanometer gas sensor with a secondary hole structure synthesized in situ by a chemical vapor deposition method. Background technique [0002] Diethyl ether is a colorless, flammable liquid with a special smell and is widely used in industrial production and scientific research. Molecular formula of diethyl ether C 2 h 5 OC 2 h 5 , is a colorless, flammable, highly volatile liquid with a pungent smell, used as an inhalational anesthetic, and is also a common drug. Ether vapor can form an explosive mixture with air. When it encounters sparks, high temperature, oxidants, perchloric acid, chlorine, oxygen, ozone, etc., there is a danger of combustion and explosion, and sometimes it is also ignited by static electricity (explosion limit 1.9%~ 36%, V / V). Because it is extremely volatile, it inevitably penetrates into people's lives and endangers people's health. Long-term low-conce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12G01N27/00B81C1/00
CPCG01N27/127B81C1/00349G01N27/00
Inventor 杜希文班圣光凌涛
Owner TIANJIN UNIV
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