Nano-titania-toughened high-density aluminum nitride-silicon carbide composite circuit board substrate material and preparation method therefor
A nano-titanium dioxide and composite circuit technology, which is applied in the field of high-density aluminum nitride-silicon carbide composite circuit board substrate materials and its preparation, can solve the problem of unsatisfactory actual thermal conductivity, restrictions on large-scale use of materials, and high-temperature sintering. Low density and other problems, to achieve the effect of easy molding, improve the utilization rate of raw materials, and reduce the sintering temperature
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[0012] The material in this example is made of the following raw materials in parts by weight: aluminum nitride 60, silicon carbide 15, nano-titanium dioxide 8, quaternary ammonium salt ionic liquid 10, bismuth oxide 0.1, yttrium oxide 0.5, an appropriate amount of ethanol, silane coupling Agent kh5501, isohexanediol 4, polyethylene glycol 1, sintering aid 6.
[0013] Wherein the sintering aid is made of the following raw materials in parts by weight: high-purity boron powder 2, cryolite powder 4, nano-aluminum nitride 10, alumina sol 10 with a solid content of 25%, acetic acid 0.01, and the preparation method of the sintering aid is as follows: : Put all the raw materials into the ball mill tank, and roll the ball mill in a closed manner for 10 hours. After the ball milling, take out the mixed slurry and put it in a vacuum drying oven for drying. The drying temperature is 80°C. After complete drying, cool to room temperature. Get it in powder form.
[0014] The preparation m...
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