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Nano-titania-toughened high-density aluminum nitride-silicon carbide composite circuit board substrate material and preparation method therefor

A nano-titanium dioxide and composite circuit technology, which is applied in the field of high-density aluminum nitride-silicon carbide composite circuit board substrate materials and its preparation, can solve the problem of unsatisfactory actual thermal conductivity, restrictions on large-scale use of materials, and high-temperature sintering. Low density and other problems, to achieve the effect of easy molding, improve the utilization rate of raw materials, and reduce the sintering temperature

Inactive Publication Date: 2016-03-09
HEFEI LONG DUO ELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the application prospects of aluminum nitride and silicon carbide ceramic substrates are broad, in the actual production process, there are relatively expensive raw materials, low high-temperature sintering density, cumbersome production process, low raw material utilization rate, and unsatisfactory actual thermal conductivity, etc. The problem restricts the large-scale use of this kind of material, and it is urgent to make further improvements in raw material preparation and production technology.

Method used

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Examples

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Embodiment Construction

[0012] The material in this example is made of the following raw materials in parts by weight: aluminum nitride 60, silicon carbide 15, nano-titanium dioxide 8, quaternary ammonium salt ionic liquid 10, bismuth oxide 0.1, yttrium oxide 0.5, an appropriate amount of ethanol, silane coupling Agent kh5501, isohexanediol 4, polyethylene glycol 1, sintering aid 6.

[0013] Wherein the sintering aid is made of the following raw materials in parts by weight: high-purity boron powder 2, cryolite powder 4, nano-aluminum nitride 10, alumina sol 10 with a solid content of 25%, acetic acid 0.01, and the preparation method of the sintering aid is as follows: : Put all the raw materials into the ball mill tank, and roll the ball mill in a closed manner for 10 hours. After the ball milling, take out the mixed slurry and put it in a vacuum drying oven for drying. The drying temperature is 80°C. After complete drying, cool to room temperature. Get it in powder form.

[0014] The preparation m...

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Abstract

The invention discloses a nano-titania-toughened high-density aluminum nitride-silicon carbide composite circuit board substrate material. According to the material, aluminum nitride powder and silicon carbide powder are used in a mixed manner, so that the material has high heat conduction and environment-friendliness; a mixed solvent prepared from quaternary ammonium salt ionic liquid, anhydrous ethanol and the like has better wettability to composite powder compared with the traditional organic solvents, and the compatibility among powders is good, so that a stable interpenetrating network structure can be formed, and the utilization ratio of raw materials is increased; slurry is good in fluidity and easy to shape, so that the sintering temperature and thermal stability of prepared preforms are better; nano-titania has good affinity, so that the material has the effects of certain reinforcing and toughening, sintering temperature lowering, substrate density improving and the like; and due to sintering auxiliaries and other raw materials, prepared substrates are better in heat conductivity, easy in sintering shaping and high in finished product rate, are thin, tough and durable and can be extensively used as a variety of circuit board substrates.

Description

technical field [0001] The invention relates to the technical field of ceramic substrate materials for circuit boards, in particular to a nano-titanium dioxide toughened high-density aluminum nitride-silicon carbide composite circuit board substrate material and a preparation method thereof. Background technique [0002] As the power and density of electronic components increase, the calorific value per unit volume also increases, and the requirements for the comprehensive performance of circuit substrates are getting higher and higher. Among them, ceramic substrates have good comprehensive performance in terms of insulation, thermal conductivity and Thermal expansion, chemical stability and other aspects are outstanding, and are gradually widely used in substrate materials. Among them, aluminum oxide and beryllium oxide are mainly used as substrate materials for a long time. However, these two materials have low thermal conductivity and are toxic. And other defects, the app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/582C04B35/622C04B35/626C04B35/632
CPCC04B35/581C04B35/622C04B35/626C04B35/632C04B2235/3225C04B2235/3232C04B2235/3298C04B2235/3826C04B2235/5454C04B2235/6582C04B2235/77C04B2235/96C04B2235/9607
Inventor 王丹丹王乐平夏运明涂聚友
Owner HEFEI LONG DUO ELECTRONICS SCI & TECH
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