Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resist underlayer film forming composition containing pyrrole novolac resin

A technology of resist lower layer and composition, which is applied in the direction of coating, photoplate-making process coating equipment, pattern surface photoplate-making process, etc., can solve the problem that it is difficult to obtain the film thickness of resist pattern, and achieve an etching The effect of patience

Inactive Publication Date: 2016-02-10
NISSAN CHEM IND LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing, and it is necessary to make not only the resist pattern, but also the resist underlayer film formed between the resist and the semiconductor substrate to be processed have a Functional process of mask during substrate processing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist underlayer film forming composition containing pyrrole novolac resin
  • Resist underlayer film forming composition containing pyrrole novolac resin
  • Resist underlayer film forming composition containing pyrrole novolac resin

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0104] 6.0 g of pyrrole (manufactured by Tokyo Chemical Industry Co., Ltd.), 14.1 g of 1-naphthaldehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), and p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were placed in a 100 ml eggplant-shaped flask. manufactured) 1.8 g, and toluene (manufactured by Kanto Chemical Co., Ltd.) 32.8 g. Then, the inside of the flask was replaced with nitrogen, and stirred at room temperature for about 2 hours. After completion of the reaction, it was diluted with 15 g of tetrahydrofuran (manufactured by Kanto Chemical Co., Ltd.). The diluted solution was added dropwise to 1,300 g of methanol (manufactured by Kanto Chemical Co., Ltd.), and reprecipitated. The obtained precipitate was suction-filtered, and the filtrate was washed with methanol, and then dried under reduced pressure at 85° C. overnight to obtain 16.4 g of novolac resin. The resulting polymer corresponds to formula (1-1). The weight avera...

Synthetic example 2

[0106] 6.0 g of pyrrole (manufactured by Tokyo Chemical Industry Co., Ltd.), 18.6 g of 9-anthracene formaldehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), and p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were added to a 200 ml eggplant-shaped flask. manufactured) 1.8 g, toluene (manufactured by Kanto Chemical Co., Ltd.) 61.6 g. Then, the inside of the flask was replaced with nitrogen, and 6.0 g of pyrrole (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise thereto at room temperature while stirring. After completion of the dropwise addition, the mixture was stirred at room temperature for about 12 hours. After completion of the reaction, the reaction solution was added dropwise to 1,200 g of hexane (manufactured by Kanto Chemical Co., Ltd.), and reprecipitated. The obtained precipitate was suction-filtered, and the filtrate was washed with hexane, and then dried under reduced pressure at 85° C. overnight ...

Synthetic example 3

[0108] 2.0 g of pyrrole (manufactured by Tokyo Chemical Industry Co., Ltd.), 7.0 g of 9-pyrene formaldehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), and p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were placed in a 100 ml eggplant-shaped flask. 0.6 g, toluene (manufactured by Kanto Chemical Co., Ltd.) 28.6 g. Then, the inside of the flask was replaced with nitrogen, and 2.0 g of pyrrole (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise while stirring at room temperature. After completion of the dropwise addition, the mixture was stirred at room temperature for about 1 hour, and then heated and stirred under reflux for about 22 hours. After completion of the reaction, 15 g of tetrahydrofuran (manufactured by Kanto Chemical Co., Ltd.) was added to dissolve the precipitated solid. The solution was added dropwise to 1,200 g of hexane (manufactured by Kanto Chemical Co., Ltd.), and reprecipitated. The obta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
polydispersity indexaaaaaaaaaa
Login to View More

Abstract

[Problem] To provide an excellent resist underlayer film which has a dry etching rate selectivity close to that of a resist, a dry etching rate selectivity lower than that of a resist, or a dry etching rate selectivity lower than that of a semiconductor substrate. [Solution] A resist underlayer film forming composition which contains a polymer that has a unit structure represented by formula (1). (In formula (1), R3 represents a hydrogen atom, a halogen group, a nitro group, an amino group, a carbonyl group, an aryl group having 6-40 carbon atoms, or an aryl group having 6-40 carbon atoms or heterocyclic group which may be substituted by a hydroxy group; R4 represents a hydrogen atom, a halogen group, a nitro group, an amino group, or an alkyl group having 1-10 carbon atoms, aryl group having 6-40 carbon atoms or heterocyclic group which may be substituted by a hydroxy group; R3 and R4 may combine to form a ring together with carbon atoms to which R3 and R4 are bonded; and n represents an integer of 0-2.) In formula (1), R3 is a benzene ring, a naphthalene ring, an anthracene ring or a pyrene ring, and R4 is a hydrogen atom.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film for lithography that is effective in processing a semiconductor substrate, a method for forming a resist pattern using the composition for forming a resist underlayer film, and a method for manufacturing a semiconductor device. Background technique [0002] Conventionally, in the manufacture of semiconductor devices, microfabrication has been performed by photolithography using a photoresist composition. The aforementioned microfabrication is a processing method in which a thin film of a photoresist composition is formed on a substrate to be processed such as a silicon wafer, and an active ray such as ultraviolet rays is irradiated thereon through a mask pattern in which a pattern of a semiconductor device is drawn. Development is performed, and the obtained photoresist pattern is used as a protective film to etch a substrate to be processed such as a silicon wafer. Ho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G12/26C08G16/02G03F7/26
CPCC08G12/26C08G16/0268C09D161/00C09D161/26C09D179/04G03F7/091H01L21/0276H01L21/0332G03F7/11G03F7/16G03F7/20G03F7/32H01L21/02271H01L21/3081
Inventor 新城彻也染谷安信柄泽凉西卷裕和远藤贵文桥本圭祐
Owner NISSAN CHEM IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com