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Based on zno nanorods/ch 3 no 3 pbi 3 /moo 3 Structured self-driven photodetectors and methods of making the same

A technology of photodetectors and nanorods, applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of low defect density, low saturation current of diodes, etc., and achieve high responsivity, length Controllable, overall structured effect

Inactive Publication Date: 2018-02-06
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the defect density in the energy band of perovskite-like materials is very low, so diodes based on perovskite materials will have very low saturation currents

Method used

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  • Based on zno nanorods/ch <sub>3</sub> no <sub>3</sub> pbi <sub>3</sub> /moo <sub>3</sub> Structured self-driven photodetectors and methods of making the same
  • Based on zno nanorods/ch <sub>3</sub> no <sub>3</sub> pbi <sub>3</sub> /moo <sub>3</sub> Structured self-driven photodetectors and methods of making the same
  • Based on zno nanorods/ch <sub>3</sub> no <sub>3</sub> pbi <sub>3</sub> /moo <sub>3</sub> Structured self-driven photodetectors and methods of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Example 1: 5nm thickness MoO 3 Preparation of the detector:

[0047] (1) Pretreatment of FTO: Cut the FTO glass sheet into square glass samples with an area of ​​2cm*2cm, then use deionized water, acetone, alcohol, and deionized water to carry out ultrasonic cleaning for 20 minutes, and the surface of the glass sheet Impurities are cleaned, and then cleaned with ultraviolet ozone (UV) for 15 minutes to remove organic matter attached to the surface.

[0048] (2) Preparation of ZnO seed layer: using methanol as solvent, prepare 5mmol / L zinc acetate (Zn(CH 3 COO) 2 ) solution, stirred for 5 minutes, and then started to spin-coat on the FTO glass sample at a rotation speed of 3000r / min for 15s, dried at 100°C for 15 minutes, and then transferred to a muffle furnace for annealing for 1h.

[0049] (3) Preparation of ZnO nanorods: grow ZnO nanorods in a water bath on the FTO glass sample with a ZnO seed layer, and the water bath solution composition is 50mmol / L zinc nitrate...

Embodiment 2

[0054] Example 2: 8nm thickness MoO 3 Preparation of the detector:

[0055] (1), (2), (3), (4) steps are identical with embodiment 1;

[0056] (5) Preparation of hole transport layer: using the method of evaporation, the semiconductor oxide MoO 3 Plated on the perovskite layer, keep 10 during evaporation -4 The vacuum degree, the evaporation rate is controlled at The thickness of vapor deposition was 8 nm.

[0057] (6) Preparation of the counter electrode: Au is used as the electrode material, and the evaporation method is adopted, and the evaporation rate is controlled at The thickness of evaporated Au is 40nm, and a complete photodetector can be fabricated.

[0058] The prepared ZnO nanorods and CH 3 NH 3 PB 3 X-ray diffraction (XRD) and scanning electron microscope (SEM) characterization were carried out respectively. The instrument used for X-ray diffraction analysis is D8Advance, and the measurement condition is 0.02° / step scan. The measurement voltage of the ...

Embodiment 3

[0059] Example 3: 12nm thickness MoO 3 Preparation of the detector:

[0060] (1), (2), (3), (4) steps are identical with embodiment 1;

[0061] (5) Preparation of hole transport layer: using the method of evaporation, the semiconductor oxide MoO 3 Plated on the perovskite layer, keep 10 during evaporation -4 The vacuum degree, the evaporation rate is controlled at The thickness of vapor deposition was 12 nm.

[0062](6) Preparation of the counter electrode: Au is used as the electrode material, and the evaporation method is adopted, and the evaporation rate is controlled at The thickness of evaporated Au is 40nm, and a complete photodetector can be fabricated.

[0063] The prepared ZnO nanorods and CH 3 NH 3 PB 3 X-ray diffraction (XRD) and scanning electron microscope (SEM) characterization were carried out respectively. The instrument used for X-ray diffraction analysis is D8Advance, and the measurement condition is 0.02° / step scan. The measurement voltage of the...

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Abstract

The invention provides a self-driven photodetector based on an FTO / ZnO nanorod / CH3NH3PbI3 / MoO3 / Au structure and a preparation method thereof. The specific structure comprises an FTO layer and a ZnO nanorod which is an electron transporting layer and a hole blocking layer. CH3NH3PbI3 is a perovskite light absorbing layer. Semiconductor oxide MoO3 is a hole transporting layer and an electron blocking layer. A metal electrode is made of an Au film. The self-driven photodetector is synthesized through spin coating and water bath and is prepared through evaporation and the like. According to the invention, an organic-inorganic hybrid heterojunction structure formed by the ZnO nanorod / CH3NH3PbI3 is used; the semiconductor oxide MoO3 is the hole transporting layer; the self-driven photodetector has the advantages of high response degree and sensitivity; the response rate and the detection rate are respectively up to 24.3A / W and 3.56*1014cmHz1 / 2 / W; the self-driven photodetector has a certain degree of self-driven capacity and does not need the drive of external bias, which is conducive to energy conservation; the performances are far more than the performances of a currently reported Si-based detector; near-ultraviolet and visible infrared detection can be realized; and the self-driven photodetector has the advantages of simple operation steps, low experiment cost and good application prospect.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor nanometer materials and self-driven photodetectors, in particular to combining ZnO nanorods and perovskite materials to form heterojunctions to produce high-performance photodetectors. 【Background technique】 [0002] Zinc oxide (ZnO) is a short-wavelength, wide-bandgap photoelectric material. Its crystallization temperature is low, it is easy to etch, it is easy to process, and it has high chemical stability and high temperature resistance. Diodes, lasers, ultraviolet detectors and other fields have a very wide range of applications. Especially in 1996, Tang et al. realized the microcrystal optically pumped ultraviolet laser emission of ZnO at room temperature [1] , then Cao Hui and others also observed the phenomenon of random ultraviolet laser emission from the self-resonant cavity of ZnO polycrystalline powder film under the same conditions [2] At the same time, "Nature" and "Science"...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0296H01L31/18B82Y30/00
CPCB82Y30/00H01L31/0296H01L31/101H01L31/18Y02P70/50
Inventor 王浩喻继超周海张军
Owner HUBEI UNIV
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