Calculation method for cut-off frequency of small signal model of graphene transistor

Abstract

A calculation method for a cut-off frequency of a small signal model of a graphene transistor comprises: forming a plurality of MOSFETs (Metal-Oxide -Semiconductor Field Effect Transistors) that use graphene materials as active regions, wherein source and drain metal contacts are formed on each active region; measuring a cut-off frequency of each MOSFET; modifying a conventional small signal model to obtain a new small signal equivalent model with respect to particular properties of an original small signal model and a contact capacity between the graphene active region and the source and drain metal contact; obtaining a new numerical solution of the cut-off frequency based on the new small signal equivalent model by using a conventional circuit analysis method, and KCL (Kirchhoff's Circuit Law) and LVL (Kirchhoff Voltage Law) analysis methods; and comparing the numerical solution of the cut-off frequency with a measured value of the cut-off frequency, and feeding back and modifying the small signal equivalence model. By using the method provided by the present invention, the cut-off frequency of the graphene transistor can be accurately calculated and fitted, and the method is suitable for high-frequency study of the graphene transistor. The method provided by the present invention is reasonable in theories, accurate in results, simple for operation, and facilitates establishment of a complete graphene transistor small signal simulation model.

Description

technical field [0001] The invention relates to the technical field of modeling and simulation of semiconductor electronic devices, in particular to a calculation method for the cutoff frequency of an improved small signal model of a graphene transistor. Background technique [0002] Graphene, as a typical two-dimensional material, has received continuous attention from the scientific community. Graphene has excellent electrical, thermal and mechanical properties, such as up to 100,000 cm at room temperature 2 The carrier mobility of / V s enables graphene to be used in touch panels, transparent conductive films and other fields. Graphene has a current density limit much greater than that of Cu, enabling low-cost wires that can pass higher currents than Cu. In the field of devices, the manufacturing process of graphene transistors is also becoming more and more perfect. In 2013, IBM produced the first graphene mixer integrated circuit. The application of graphene transisto...

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Problems solved by technology

For the contact characteristics of the device, foreign experts have completed the research on the contact characteristics and contact capacitance characteristics of graphene and metals, but there is no complete small-signal model that takes into account the influence of the contact capacitance and the perfect small-signal model for the cut-off frequency The impact of the calculation of

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