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Flexible substrate thin film solar cell with diamond protective layer structure and preparation method

A technology for solar cells and flexible substrates, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor market competitiveness of thin-film solar cells, poor photoinduced performance stability of solar cells, and low photoelectric conversion efficiency, etc., to improve Photoelectric conversion efficiency, increased market competitiveness, light weight effect

Active Publication Date: 2017-10-13
许昌国晟科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Secondly, because the bandgap width of amorphous or microcrystalline silicon (Si) film is about 1.7eV, it is very insensitive to the long wave of solar radiation spectrum, making its photoelectric conversion efficiency low, and there is also obvious photodegradation effect, making it The photoinduced performance of solar cells is less stable
Make thin film solar cells less competitive in the market

Method used

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  • Flexible substrate thin film solar cell with diamond protective layer structure and preparation method
  • Flexible substrate thin film solar cell with diamond protective layer structure and preparation method
  • Flexible substrate thin film solar cell with diamond protective layer structure and preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] see figure 1 combine figure 2 .

[0027] (1), the flexible substrate polyimide (PI) substrate substrate is first cleaned with ionized water for 5 minutes, then dried with nitrogen and sent to the magnetron sputtering reaction chamber, at 8.0 × 10 -4 Under the condition of Pa vacuum, the diamond anti-corrosion insulating layer is prepared by deposition. The process parameter conditions are: hydrogen and methane are used as the mixed gas reaction source, the flow ratio of hydrogen and methane is 10:1, the substrate temperature is 100°C, and the deposition time is 30 minutes.

[0028] (2), using magnetron sputtering to prepare ITO-based transparent conductive film; its process parameter conditions are: oxygen gas is used as the gas reaction source, the oxygen flow rate is 20 sccm, the purity of the reactive sputtering indium metal target is 99.99%, the substrate The temperature was 150°C and the deposition time was 10 minutes.

[0029] (3) Continue to prepare the PIN ...

Embodiment 2

[0033] (1), the flexible substrate polyimide (PI) substrate substrate is first cleaned with ionized water for 5 minutes, then dried with nitrogen and sent to the magnetron sputtering reaction chamber, at 8.0 × 10 -4 Under the condition of Pa vacuum, the diamond anti-corrosion insulating layer is prepared by deposition. The process parameter conditions are: hydrogen and methane are used as the mixed gas reaction source, the flow ratio of hydrogen and methane is 10:1, the substrate temperature is 200°C, and the deposition time is 40 minutes.

[0034] (2), using magnetron sputtering to prepare ITO-based transparent conductive film; its process parameter conditions are: oxygen gas is used as the gas reaction source, the oxygen flow rate is 15 sccm, the purity of the reactive sputtering indium metal target is 99.99%, the substrate The temperature was 80°C and the deposition time was 5 minutes.

[0035] (3) Continue to prepare the PIN layer In with adjustable bandgap in the electro...

Embodiment 3

[0039] (1), the flexible substrate polyimide (PI) substrate substrate is first cleaned with ionized water for 5 minutes, then dried with nitrogen and sent to the magnetron sputtering reaction chamber, at 8.0 × 10 -4 Under the condition of Pa vacuum, the diamond anti-corrosion insulating layer is prepared by deposition. The process parameter conditions are: hydrogen and methane are used as the mixed gas reaction source, the flow ratio of hydrogen and methane is 10:1, the substrate temperature is 300°C, and the deposition time is 45 minutes.

[0040] (2), using magnetron sputtering to prepare ITO-based transparent conductive film; its process parameter conditions are: oxygen gas is used as the gas reaction source, the oxygen flow rate is 20 sccm, the purity of the reactive sputtering indium metal target is 99.99%, the substrate The temperature was 150°C and the deposition time was 9 minutes.

[0041] (3) Continue to prepare the PIN layer In with adjustable bandgap in the electr...

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Abstract

The invention relates to a preparation method of a flexible substrate thin-film solar cell with a diamond protection layer structure. A diamond insulating protective thin film, an indium tin oxide (ITO) transparent conductive thin film, a P-type In*Ga1-xN quantum well intrinsic crystal thin film, an I-type In<x>Ga<1-x>N quantum well intrinsic crystal thin film, an N-type In<x>Ga<1-x>N quantum well intrinsic crystal thin film, another ITO transparent conductive thin film and a metal Ag electrode are sequentially deposited on a polyimide flexible substrate. The flexible solar cell has the maximal characteristics that the flexible solar cell is light in weight, convenient to carry and not easy to crush; the gravimetric specific power and the volumetric specific power are a few of magnitudes higher than those of other kinds of cells; the thin-film solar cell has good flexibility; the material and structure of an I layer are changed; the In<x>Ga<1-x>N quantum well intrinsic crystal thin film with an adjustable band gap is introduced as the I layer; the In<x>Ga<1-x>N material has good stability and corrosion resistance and has a tunneling barrier and a low light loss factor; and the conversion efficiency of the cell is improved. With diamond as an insulating protective layer, the corrosion resistance is further enhanced; and the service life of the thin-film solar cell is greatly prolonged.

Description

technical field [0001] The invention belongs to the technical field of flexible solar cell manufacturing, and in particular relates to a thin-film solar cell preparation method of a flexible substrate with a diamond protective layer structure. Background technique [0002] Flexible substrate thin-film solar cells refer to thin-film solar cells made of flexible materials, namely polyimide (PI) or flexible stainless steel. Has broad market competitiveness. Thin-film solar cells that have been commercially used at present are mainly amorphous silicon thin films based on glass substrates, which are made by using silane (SiH 4 ), while doping borane (B 2 h 6 ) and phosphine (PH 3 ) and other gases, which are prepared at low temperature on an inexpensive glass substrate to form a photovoltaic PIN single-junction or multi-junction thin-film solar cell structure. [0003] At present, most thin-film solar cells with relatively mature technologies are made of silicon-based materi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0304
CPCH01L31/03048H01L31/1848Y02E10/544Y02P70/50
Inventor 张东
Owner 许昌国晟科技有限公司
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