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Growth method for GaN-based LED epitaxial wafer

A technology of LED epitaxial wafer and growth method, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of unfavorable crystal quality and epitaxial surface, complex process technology, increased forward voltage, etc.

Inactive Publication Date: 2015-12-02
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such as patent CN102347410A, by corroding the sapphire substrate, a roughened structure is formed at the interface between the sapphire substrate and GaN, which reduces the total reflection of light on the GaN layer, thereby improving the luminous efficiency of the light-emitting diode, but the roughened surface formed by this method is difficult Uniform corrosion is not conducive to obtaining good crystal quality and epitaxial surface, and the process technology is relatively complicated
Patent CN102005512A improves the luminous efficiency of light-emitting diodes by roughening the surface of GaN-based light-emitting diodes, but the roughened surface will reduce the stability of the contact layer, and there are a series of technical problems in the process of back-end chip processing, such as Forward voltage rise, etc.

Method used

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  • Growth method for GaN-based LED epitaxial wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The MOCVD method is used to grow sequentially from bottom to top:

[0035] 1. Put the sapphire substrate with (0001) crystal orientation into the reaction chamber, and then 2 Heating to 1100° C. under atmosphere and baking for 8 minutes to purify the substrate at high temperature.

[0036] 2. Lower the temperature to 530°C to grow a low-temperature GaN buffer layer with a thickness of 30nm.

[0037] 3. A non-doped GaN layer with a thickness of 2 microns was grown at 1070°C.

[0038] 4. Grow an n-type GaN layer with a thickness of 2 microns at 1070°C.

[0039] 5. Grow 10 cycles of InGaN / GaN multi-quantum well layers, the thickness of the GaN barrier layer is 22nm, the growth temperature is 860°C; the thickness of the InGaN well layer is 3nm, the growth temperature is 740°C, and the growth time is 5 minutes. During the whole growth process of the InGaN well layer for 5 minutes, hydrogen gas is completely injected, and the flow rate is 0.01 slm.

[0040] 6. Raise the t...

Embodiment 2

[0047] The growth conditions of other steps are the same as in Example 1.

[0048] The difference is that in step 5, the InGaN / GaN multi-quantum well layer is grown for 15 cycles, the thickness of the GaN barrier layer is 20nm, and the growth temperature is 860°C; the thickness of the InGaN well layer is 2.5nm, the growth temperature is 740°C, and the growth time for 3 minutes. 1 minute after the start of the growth of the InGaN well layer, hydrogen gas was introduced, the flow rate was 10 slm, and the duration was 0.1 minute.

[0049] The epitaxial wafer obtained in this embodiment was fabricated into a 300 micron×300 micron chip using ITO as a transparent electrode according to a standard chip process. After the test, the brightness has increased by 25% compared with the normal process, the reverse voltage has increased by 12V, and the forward voltage has decreased by 0.15V.

Embodiment 3

[0051] The growth conditions of other steps are the same as in Example 1.

[0052] The difference is that in step 5, 20 cycles of InGaN / GaN multi-quantum well layers are grown, the thickness of the GaN barrier layer is 18nm, and the growth temperature is 860°C; the thickness of the InGaN well layer is 2nm, the growth temperature is 740°C, and the growth time is 2.5 minutes. 0.2 minutes after the start of the growth of the InGaN well layer, hydrogen gas was introduced, the flow rate was 0.2 slm, and the duration was 2.3 minutes.

[0053] The epitaxial wafer obtained in this embodiment was fabricated into a 300 micron×300 micron chip using ITO as a transparent electrode according to a standard chip process. After the test, the brightness increased by 20% compared with the normal process, the reverse voltage increased by 8V, and the forward voltage decreased by 0.08V.

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Abstract

The invention discloses a growth method for a GaN-based LED epitaxial wafer. During the growing of InGaN / GaN multiple quantum wells, a proper amount of hydrogen is let in at a proper time under the conventional growth conditions, thereby effectively inhibiting a cluster effect of In, improving the flatness of an InGaN / GaN interface, improving the light-emitting efficiency, improving a reverse voltage of a device, and reducing a forwarding voltage. The method is simple and feasible, has no special requirements for the growing technology. A 300 microns* 300 microns chip is manufactured according to a standard chip technology, thereby improving the brightness by 10%-20%, improving the reverse voltage by 5V, and reducing the forwarding voltage by more than 0.05V.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a growth method for improving the brightness of GaN-based LED epitaxial wafers. Background technique [0002] The emergence and development of GaN-based LEDs has caused a revolution in solid-state lighting that has swept the world, and has now entered the field of functional lighting and gradually entered the field of general lighting. The light efficiency of LED is much higher than that of traditional lighting and display light sources, showing better energy-saving effects. For example, it can save energy by 70% in landscape lighting, LCD TV backlight can save energy by 50%, and road lighting can save energy by more than 50%. In 2015, if my country's semiconductor lighting products can enter 30% of the general lighting market, it will save about 100 billion kWh of electricity every year, contribute one percentage point to the reduction of energy consumption per unit of GD...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00C30B25/02C30B29/38
Inventor 肖志国关秋云杨天鹏展望张博武胜利
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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