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Solar cell anti-reflection film and preparation method thereof

A technology of solar cells and anti-reflection coatings, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor adhesion, affecting reflection efficiency, and insufficient product identity

Inactive Publication Date: 2015-11-25
WUXI JIABANG ELECTRIC POWER PIPE FACTORY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] CN104241402A discloses an anti-reflection film for a solar cell and a preparation method thereof; wherein the anti-reflection film is composed of an amorphous silicon layer, a first silicon nitride film and a second silicon nitride film that are stacked in sequence, The anti-reflection film of this invention has the effect of passivation and anti-reflection at the same time, but the controllability of the equipment is low, the product identity is not enough, and it is not easy to mass-produce
CN101989623A discloses an anti-reflection film for a solar cell and a preparation method thereof, wherein the anti-reflection film includes a silicon nitride film deposited on the surface of a silicon wafer, the average refractive index is 2.1-2.3, and the average reflectance is 1-10%. ; The preparation method is through the steps of coating the silicon wafer for the first time, cooling and coating for the second time; the anti-reflection film of the invention has uniform thickness and good compactness, and the thickness is controllable, but the adhesion is poor, which affects its reflection efficiency , and the deposition conditions are more stringent

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0038] In this embodiment, the following method is used to prepare the anti-reflection film of the solar cell:

[0039] (1) feed silicon chip, silicon hydride and nitrogen in the plasma enhanced chemical vapor deposition equipment, make the surface deposition silicon oxynitride thin film of described silicon chip; The flow ratio of described silicon chip, silicon hydride and nitrogen is: 1:1:1; the frequency of the plasma-enhanced chemical vapor deposition equipment is 12MHz; the gas pressure is 20Pa; the temperature is 100°C; the radio frequency power is 3500W; the deposition power is 38W;

[0040] (2) Continue to feed nano-titanium dioxide and inert gas in the plasma-enhanced chemical vapor deposition equipment, so that nano-titanium dioxide is deposited on the surface of the silicon oxynitride film layer; the flow ratio of described nano-titanium dioxide and inert gas is 1:10; The frequency of the plasma enhanced chemical vapor deposition equipment is 10MHz; the gas pressur...

Embodiment 2

[0045] In this embodiment, the following method is used to prepare the anti-reflection film of the solar cell:

[0046] (1) feed silicon chip, silicon hydride and nitrogen in the plasma enhanced chemical vapor deposition equipment, make the surface deposition silicon oxynitride thin film of described silicon chip; The flow ratio of described silicon chip, silicon hydride and nitrogen is: 1:4:3; the frequency of the plasma-enhanced chemical vapor deposition equipment is 16MHz; the gas pressure is 80Pa; the temperature is 300°C; the radio frequency power is 6000W; the deposition power is 70W;

[0047] (2) Continue to feed nano-titanium dioxide and inert gas in the plasma enhanced chemical vapor deposition equipment, so that nano-titanium dioxide is deposited on the surface of the silicon oxynitride film layer; the flow ratio of described nano-titanium dioxide and inert gas is 1:25; The frequency of the plasma-enhanced chemical vapor deposition equipment is 13MHz; the gas pressur...

Embodiment 3

[0052] In this embodiment, the following method is used to prepare the anti-reflection film of the solar cell:

[0053] (1) feed silicon chip, silicon hydride and nitrogen in the plasma enhanced chemical vapor deposition equipment, make the surface deposition silicon oxynitride thin film of described silicon chip; The flow ratio of described silicon chip, silicon hydride and nitrogen is: 1:2:1.5; the frequency of the plasma-enhanced chemical vapor deposition equipment is 14MHz; the gas pressure is 50Pa; the temperature is 200°C; the radio frequency power is 4250W; the deposition power is 54W;

[0054] (2) Continue to feed nano-titanium dioxide and inert gas in the plasma enhanced chemical vapor deposition equipment, so that nano-titanium dioxide is deposited on the surface of the silicon oxynitride film layer; the flow ratio of described nano-titanium dioxide and inert gas is 1:17.5; The frequency of the plasma-enhanced chemical vapor deposition equipment is 11.5MHz; the gas p...

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Abstract

The invention relates to a solar cell anti-reflection film and a preparation method thereof. The solar cell anti-reflection film comprises a silicon oxynitride thin film layer, a nanometer titanium oxide layer, a silicon nitride layer, a silicon dioxide layer and an amorphous silicon layer which are sequentially stacked and deposited on the surface of a silicon wafer. The preparation method comprises the following steps of firstly, introducing the silicon wafer, a silicon hydride and nitrogen into a plasma enhanced chemical vapor deposition device to lead the silicon oxynitride thin film layer to be deposited on the surface of the silicon wafer; secondly, introducing nanometer titanium dioxide and an inert gas to deposit the nanometer titanium oxide layer; thirdly, introducing silane and an ammonia gas to deposit the silicon nitride layer; fourthly, introducing silicon dioxide to deposit the silicon dioxide layer; and finally, introducing the silane and a hydrogen to deposit the amorphous silicon layer. With the adoption of the multiple layers of thin films, an anti-reflection effect can be simultaneously played on multiple specific wavelengths; moreover, the thickness and the refractive indexes of the thin films can be controlled, so that a better anti-reflection effect can be simultaneously played on luminous energy of the multiple specific wavelengths; and the preparation method is moderate in condition and is easy to operate.

Description

technical field [0001] The invention relates to the field of new energy technologies, in particular to the field of anti-reflection films for solar cells, in particular to an anti-reflection film for solar cells and a preparation method thereof. Background technique [0002] With the rapid development of human society, environmental degradation and energy shortage have become the most prominent problems in the world. At present, more than 70% of the world's total energy consumption comes from non-renewable energy sources such as oil, natural gas, and coal. Long-term and large-scale utilization of these non-renewable energy sources will cause many harms. Solar energy is an ideal clean and renewable new energy source, which can alleviate energy shortage and environmental pollution. A solar cell is a device that directly converts solar radiation energy into electrical energy. At present, crystalline silicon solar cells account for about 80% of the world's solar cell producti...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/18Y02E10/50Y02P70/50
Inventor 徐德生
Owner WUXI JIABANG ELECTRIC POWER PIPE FACTORY
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