Solar cell anti-reflection film and preparation method thereof
A technology of solar cells and anti-reflection coatings, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor adhesion, affecting reflection efficiency, and insufficient product identity
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Embodiment 1
[0038] In this embodiment, the following method is used to prepare the anti-reflection film of the solar cell:
[0039] (1) feed silicon chip, silicon hydride and nitrogen in the plasma enhanced chemical vapor deposition equipment, make the surface deposition silicon oxynitride thin film of described silicon chip; The flow ratio of described silicon chip, silicon hydride and nitrogen is: 1:1:1; the frequency of the plasma-enhanced chemical vapor deposition equipment is 12MHz; the gas pressure is 20Pa; the temperature is 100°C; the radio frequency power is 3500W; the deposition power is 38W;
[0040] (2) Continue to feed nano-titanium dioxide and inert gas in the plasma-enhanced chemical vapor deposition equipment, so that nano-titanium dioxide is deposited on the surface of the silicon oxynitride film layer; the flow ratio of described nano-titanium dioxide and inert gas is 1:10; The frequency of the plasma enhanced chemical vapor deposition equipment is 10MHz; the gas pressur...
Embodiment 2
[0045] In this embodiment, the following method is used to prepare the anti-reflection film of the solar cell:
[0046] (1) feed silicon chip, silicon hydride and nitrogen in the plasma enhanced chemical vapor deposition equipment, make the surface deposition silicon oxynitride thin film of described silicon chip; The flow ratio of described silicon chip, silicon hydride and nitrogen is: 1:4:3; the frequency of the plasma-enhanced chemical vapor deposition equipment is 16MHz; the gas pressure is 80Pa; the temperature is 300°C; the radio frequency power is 6000W; the deposition power is 70W;
[0047] (2) Continue to feed nano-titanium dioxide and inert gas in the plasma enhanced chemical vapor deposition equipment, so that nano-titanium dioxide is deposited on the surface of the silicon oxynitride film layer; the flow ratio of described nano-titanium dioxide and inert gas is 1:25; The frequency of the plasma-enhanced chemical vapor deposition equipment is 13MHz; the gas pressur...
Embodiment 3
[0052] In this embodiment, the following method is used to prepare the anti-reflection film of the solar cell:
[0053] (1) feed silicon chip, silicon hydride and nitrogen in the plasma enhanced chemical vapor deposition equipment, make the surface deposition silicon oxynitride thin film of described silicon chip; The flow ratio of described silicon chip, silicon hydride and nitrogen is: 1:2:1.5; the frequency of the plasma-enhanced chemical vapor deposition equipment is 14MHz; the gas pressure is 50Pa; the temperature is 200°C; the radio frequency power is 4250W; the deposition power is 54W;
[0054] (2) Continue to feed nano-titanium dioxide and inert gas in the plasma enhanced chemical vapor deposition equipment, so that nano-titanium dioxide is deposited on the surface of the silicon oxynitride film layer; the flow ratio of described nano-titanium dioxide and inert gas is 1:17.5; The frequency of the plasma-enhanced chemical vapor deposition equipment is 11.5MHz; the gas p...
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Abstract
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