LED epitaxial growth method for enhancing antistatic effect of device

An epitaxial growth, anti-static technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of weak anti-static ability, weakened anti-static ability, and poor crystal quality of LED devices, and achieve low dislocation density. , The effect of improving antistatic ability and improving crystal quality

Active Publication Date: 2015-11-18
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because GaN material has dense dislocations and poor crystal quality, which provides a leakage channel, the antistatic ability of LED devices is relatively weak, especially at high voltages.

Method used

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  • LED epitaxial growth method for enhancing antistatic effect of device
  • LED epitaxial growth method for enhancing antistatic effect of device
  • LED epitaxial growth method for enhancing antistatic effect of device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Use high-purity H2 or high-purity N2 or a mixture of high-purity H2 and high-purity N2 as the carrier gas, high-purity NH3 as the N source, metal organic source trimethylgallium (TMGa) as the gallium source, trimethylindium (TMIn ) as the indium source, the N-type dopant as silane (SiH4), trimethylaluminum (TMAl) as the aluminum source, the P-type dopant as magnesocene (CP2Mg), and the substrate as (0001) sapphire, the reaction The pressure is between 100mbar and 800mbar.

[0024] Step 101: maintaining the temperature at 900° C., maintaining the pressure in the reaction chamber at 100 mbar, and injecting 50 L / min of hydrogen gas to treat the sapphire substrate 1 at high temperature for 5 minutes;

[0025] Step 102: Maintaining the temperature at 700°C and maintaining the pressure in the reaction chamber at 100mbar, injecting 50L / min of hydrogen gas, 50L / min of ammonia gas, and 100 sccm of ...

Embodiment 2

[0033] Step 201: maintaining the temperature at 1100° C., maintaining the pressure in the reaction chamber at 200 mbar, and injecting 100 L / min of hydrogen to treat the sapphire substrate 1 at high temperature for 10 minutes;

[0034] Step 202: maintaining the temperature at 800° C. and the pressure of the reaction chamber at 300 mbar, feeding 100 L / min of hydrogen gas, 100 L / min of ammonia gas, and 200 sccm of TMAl source to grow an AlN layer 6 with a thickness of 60 nm on the sapphire substrate;

[0035] Step 203: Raise the temperature to 900° C., maintain the pressure of the reaction chamber at 300 mbar, feed 100 L / min of hydrogen gas, 100 L / min of ammonia gas, 300 sccm of TMGa source, and 200 sccm of TMAl to continuously grow 5 μm of Al on the AlN layer 6 x Ga ( 1-x) N layer 7, the value range of x is between 0-1, which is 0.8 in this embodiment;

[0036] Step 204: Keep the temperature at 1100°C, maintain the pressure in the reaction chamber at 300mbar, feed 90L / min of hy...

Embodiment 3

[0042] Step 301: maintaining the temperature at 1000° C., maintaining the pressure in the reaction chamber at 150 mbar, and injecting 75 L / min of hydrogen gas to treat the sapphire substrate 1 at high temperature for 7 minutes;

[0043] Step 302: maintaining the temperature at 750° C. and the pressure of the reaction chamber at 200 mbar, feeding 75 L / min of hydrogen gas, 75 L / min of ammonia gas, and 150 sccm of TMAl source to grow an AlN layer 6 with a thickness of 40 nm on the sapphire substrate;

[0044] Step 303: Raise the temperature to 850° C., maintain the pressure of the reaction chamber at 200 mbar, feed 75 L / min of hydrogen gas, 75 L / min of ammonia gas, 250 sccm of TMGa source, and 125 sccm of TMAl to continuously grow 4 μm of Al on the AlN layer 6 x Ga (1-x) N layer 7, the value of x is 0.5;

[0045] Step 304: Keep the temperature at 1050°C, maintain the pressure in the reaction chamber at 225mbar, feed 70L / min of hydrogen, 50L / min of ammonia, 250sccm of TMGa source...

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Abstract

The invention discloses an LED epitaxial growth method for enhancing the antistatic effect of a device. The method includes processing a sapphire substrate under high temperature, growing an AlN layer on the sapphire substrate, growing an AlxGa (1-x) N layer on the AlN layer, continuously growing an Si-doped N type GaN layer, periodically growing an active layer MQW, continuously growing a P-type AlxGaN layer, continuously growing 100-300nm magnesium-doped P-type GaN layer, cooling to 700-800 DEG C, individually introducing 100-150L / min nitrogen, warming 20-30 ms and then cooling in a furnace. Dislocation due to crystal lattice mismatch is reduced based on the advantages of low crystal lattice mismatch between AlN and sapphire substrate Al2O3 and low crystal lattice mismatch of AlGaN material, AlN and Gan. The dislocation density of an epitaxial layer is reduced, the crystal quality of the epitaxial layer is increased, and the dislocation density is small. When the LED device is under a static high voltage higher than 2kV, the electric leakage channels are fewer, the breakdown probability is reduced, and the antistatic effect is improved. The electric leakage of the LED device is reduced, and the LED product quality is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial growth method for enhancing the antistatic ability of devices. Background technique [0002] At present, the domestic MOCVD epitaxial growth technology covers about 70% of the LED industry technology. How to grow better epitaxial wafers has been paid more and more attention, and the demand for high-quality epitaxial wafers is increasing. Because of the improvement of the crystal quality of the epitaxial layer, the performance of LED devices can wait until it is improved. , LED life, anti-aging ability, antistatic ability, and stability will increase with the improvement of the quality of the epitaxial layer crystal, among which antistatic ability is an important parameter of the product, strong antistatic ability, high price and good quality High rate, resulting in significant economic benefits. [0003] In the traditional epitaxial technology, GaN materi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L33/12H01L33/00
CPCH01L21/0254H01L21/0262H01L33/0075H01L33/12
Inventor 张宇苗振林卢国军徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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