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Graphene film, its preparation method and use

A graphene film and copper foil technology, applied in graphene, gaseous chemical plating, metal material coating process, etc., can solve the problems of low surface cleanliness and activity of copper foil, uneven growth of graphene film, etc. Uniform distribution of square resistance and transmittance, uniform and stable nucleation growth, and thorough removal

Active Publication Date: 2018-03-02
2D CARBON CHANGZHOU TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a preparation method of graphene film, which solves the technical problem of uneven growth of graphene film due to the low cleanliness and activity of the copper foil surface through the treatment of copper foil

Method used

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  • Graphene film, its preparation method and use
  • Graphene film, its preparation method and use
  • Graphene film, its preparation method and use

Examples

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Embodiment 1

[0031] The preparation method of the graphene film of the present embodiment adopts the chemical vapor deposition (CVD) method, which includes: the copper foil blank is processed, and then the step of growing the graphene film on the copper foil substrate, see figure 1 , The steps of processing the copper foil include: (1) plasma pretreatment, (2) electrochemical polishing and cleaning, and (3) secondary plasma treatment. Specifically include the following steps:

[0032] (1) Plasma pretreatment: The treatment process is carried out in two steps. First, the cut copper foil blank is placed in a vacuum plasma cleaning machine, and a certain flow of oxygen is passed through to perform the first plasma decontamination treatment. The active particles in the oxygen plasma can go deep into the micro holes and depressions, completely remove the dirt on the surface of the copper foil blank through chemical reaction, and effectively improve the cleanliness of the surface of the copper f...

Embodiment 2

[0045] On the basis of the copper foil for graphene film growth in embodiment 1, the present invention also provides a kind of graphene film, this graphene film is made by the preparation method of above-mentioned graphene film, specifically through embodiment 1 described The graphene film is grown with copper foil.

[0046] See figure 2 As shown in Figure 6, the copper foil blanks that have undergone different processing processes are placed in the same diffusion furnace at the same time, and the growth process is controlled to carry out the nucleation and growth of CVD graphene film, and the obtained copper foil samples are placed on a constant temperature heating plate and baked at 150 °C After 5 minutes, observe with a metallographic microscope. The results are shown in Figure 6(a) to Figure 6(d). The white substance in the figure is the graphene film grains in the process of nucleation and growth. It can be seen from Figure 6(a) that the untreated copper foil has a larg...

Embodiment 3

[0048] A kind of transparent electrode on the basis of embodiment 2, it adopts described graphene film to make.

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Abstract

The invention relates to a preparation method of a graphene film. The preparation method comprises the following steps: treating a copper foil blank and then growing the graphene film on a copper foil, wherein the step of treating the copper foil blank comprises the following sub-steps: (1) carrying out plasma cleaning on the copper foil blank to remove dirt and then carrying out plasma oxide layer removal treatment on the copper foil blank to remove a surface oxide layer of the copper foil blank, wherein hydrogen is utilized as a plasma; (2) carrying out electrochemical polishing on the copper foil blank from which the oxide layer is removed; (3) repeating the step (1) to remove the surface oxide layer of the polished copper foil blank, thus obtaining the copper foil used for graphene film growth. A two-step method is adopted in the plasma treatment process, oxygen is pumped in to eliminate organic stains in the first step, hydrogen or other reducing gases are pumped in to remove the oxide layer in the second step, the two processes belong to chemical reaction which is more efficient than physical reaction in which argon is pumped in and is more thorough in treatment, and yellowing of the copper foil can be effectively avoided to improve the integrity and uniformity of late graphene film generation.

Description

technical field [0001] The invention relates to a graphene film, a preparation method thereof, and a transparent electrode made of the graphene film. Background technique [0002] Graphene film, a single layer of carbon atoms with a graphite structure, has shocked the entire scientific community with its unique structure and excellent properties since it was first discovered in 2004. The rapid development of graphene films urgently requires large-scale batch preparation of high-quality graphene films with controllable structure thickness and size. At present, there are mainly the following methods for preparing graphene thin films: (1) micromechanical exfoliation method, (2) crystal epitaxial growth method, (3) chemical redox method, and (4) chemical vapor deposition (CVD) method. Among them, the CVD method is currently the most commonly used method for preparing large-area graphene films. The CVD method refers to the method in which the reaction substances undergo chemica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/02C23C16/26C01B32/186
Inventor 金虎邓科文刘志成彭鹏张志华张文国杨海涛张旭磊齐轩
Owner 2D CARBON CHANGZHOU TECH INC
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