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Method for Improving Bonding Strength of Cemented Carbide and Diamond Coating

A technology of diamond coating and hard alloy, which is applied in the direction of metal material coating process, coating, ion implantation plating, etc., can solve the problem of reducing the performance of coating tools, and achieve nucleation and growth, rough surface The effect of increasing the degree and improving the bonding strength

Active Publication Date: 2017-04-12
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the hardness of the deposited layer is much lower than that of the cemented carbide workpiece and diamond, there is a soft layer between the substrate of the diamond coating / WC-Co workpiece, which reduces the performance of the coated tool to a certain extent. The increase in the thickness of the sediment layer will become more obvious

Method used

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  • Method for Improving Bonding Strength of Cemented Carbide and Diamond Coating
  • Method for Improving Bonding Strength of Cemented Carbide and Diamond Coating
  • Method for Improving Bonding Strength of Cemented Carbide and Diamond Coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Diffusion barrier layers were fabricated using metallic Mo targets.

[0040] First prepare the Mo diffusion barrier layer:

[0041] 1) Grind and roughen the surface of YG6 (WC-6%Co) cemented carbide workpiece 1 with 8 μm diamond powder, then ultrasonically clean it with deionized water and acetone respectively, and dry it with hot air. The surface of the ground cemented carbide workpiece 1 have a certain roughness, such as attached figure 1 shown;

[0042] 2) Place the pretreated cemented carbide workpiece 1 in the double-layer glow plasma surface alloying equipment, adjust the distance between the Mo target and the workpiece 1 to 18 mm, evacuate until the vacuum degree reaches below 1Pa, and pass Ar and CH 4 Mixed gas, the flow rate is Ar:65sccm, CH 4 The content accounts for 2% of Ar gas, the pressure of the vacuum chamber is controlled at 40Pa, the cathode and source power supplies are turned on, the source voltage is adjusted to 500V, and the cathode voltage is ...

Embodiment 2

[0048] Diffusion barrier layer was prepared by using Mo-Ti composite target.

[0049] First prepare the Mo-Ti diffusion barrier layer:

[0050] 1) Grind and roughen the surface of YG8 (WC-8%Co) cemented carbide workpiece 1 with 10 μm diamond powder, then ultrasonically clean it with deionized water and acetone, and dry it with hot air;

[0051] 2) Place the pretreated cemented carbide workpiece 1 in the double-layer glow plasma surface alloying equipment, adjust the distance between the Mo-Ti composite target and the workpiece 1 to 20 mm, and evacuate until the vacuum degree reaches below 1Pa. into Ar and C 2 h 2 Mixed gas, its flow rate is Ar:70sccm, C 2 h 2 Ar content accounts for 3% of Ar gas, the pressure of the vacuum chamber is controlled at 45Pa, the cathode and source power supplies are turned on, the source voltage is adjusted to 300V, and the cathode voltage is adjusted to make it 200V higher than the source voltage. Sputtering, the pre-sputtering temperature is...

Embodiment 3

[0057] Diffusion barrier layers were fabricated using Cr targets.

[0058] First prepare the Cr diffusion barrier layer:

[0059] 1) Grind and roughen the surface of workpiece 1 with 3 μm diamond micropowder, then ultrasonically clean it with deionized water and acetone, and dry it with hot air;

[0060] 2) Place the pretreated workpiece 1 in the double-layer glow plasma surface alloying equipment, use Cr element material as the target material, adjust the distance between the target material and the workpiece 1 to 15mm, and evacuate until the vacuum degree reaches below 1Pa. into Ar and C 3 h 8 The mixed gas, where Ar flow rate is 60sccm, C 3 h 8 The content accounts for 5% of Ar, the pressure of the vacuum chamber is controlled at 50Pa, the cathode and source power supplies are turned on, the source voltage is adjusted to 600V, and the cathode voltage is adjusted to be 300V higher than the source voltage, and the workpiece 1 is pre-sputtered Sputtering, the pre-sputteri...

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Abstract

The invention relates to a method for improving the bonding strength of a hard alloy and a diamond coating. The method is realized by the technical scheme that by adopting a double glow plasma surface alloying technology, taking a metal carbide forming element material or a composite material of metal carbide forming elements as a target, inert gases as protecting gases, as well as carbon-containing gases as precursors, a diffusion barrier layer is prepared on the surface layer of the hard alloy, and then the diamond coating is deposited on the hard alloy surface on which the diffusion barrier layer is prepared by using a chemical vapor deposition method. By the use of the diffusion barrier layer prepared by the method disclosed by the invention, the diffusion of Co element to the surface layer of the hard alloy can be effectively stopped, the damage to a hard alloy matrix due to a surface Co removing treatment method is avoided, and the interface stress problem introduced by a transition layer applying method due to new interface addition can be avoided, so that the bonding strength between the diamond coating and the hard alloy matrix can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of material coating, in particular to a method for improving the bonding strength of cemented carbide and diamond coating. Background technique [0002] Diamond has excellent properties such as extremely high hardness, excellent wear resistance, extremely low coefficient of friction, and the highest thermal conductivity, and is an ideal material for coating tools. The diamond-coated tool obtained by depositing it on the surface of cemented carbide (WC-Co) tool by chemical vapor deposition (CVD) has the characteristics of high hardness of diamond and high toughness of cemented carbide. Alloys, various particle or fiber reinforced composite materials, high-tech ceramics and other material processing fields have broad application prospects. [0003] However, in the CVD process, the binder phase Co in WC-Co is likely to cause the dissolution of carbon, inhibit the nucleation of the diamond phase, and promote th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/38C23C14/06
Inventor 于盛旺黑鸿君高洁高雪艳钟强戎卧龙申艳艳刘小萍贺志勇
Owner TAIYUAN UNIV OF TECH
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