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A kind of semiconductor device and its preparation method

A technology for semiconductors and devices, applied in the display field, can solve the problems of reduced voltage withstand performance of capacitors, and achieve the effect of solving the problems of reduced voltage withstand performance, small drift value, and improved yield

Active Publication Date: 2018-05-25
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Therefore, what the present invention aims to solve is the problem that the manufacturing method of the semiconductor device in the existing active matrix organic light-emitting display device easily leads to a reduction in the withstand voltage performance of the capacitor, and provides a method for preparing a semiconductor device that does not affect the withstand voltage performance of the capacitor and semiconductor devices prepared by the method

Method used

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  • A kind of semiconductor device and its preparation method
  • A kind of semiconductor device and its preparation method
  • A kind of semiconductor device and its preparation method

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Embodiment

[0040] This embodiment provides a method for preparing a semiconductor device and a semiconductor device prepared therefor, including the following steps:

[0041] S1, such as figure 2 As shown, a semiconductor layer 12 is formed on a substrate 10 including a thin film transistor region A and a capacitor region B; image 3 As shown, the semiconductor layer 12 is patterned by photolithography and dry etching processes to form island-shaped patterns in the thin film transistor region A and capacitor region B respectively.

[0042] The substrate 10 is selected from but not limited to a glass substrate, a polymer substrate or a metal substrate, all of which can achieve the purpose of the present invention and belong to the protection scope of the present invention. In this embodiment, a glass substrate is preferred; the substrate 10 is divided into a thin film transistor region A and a capacitor region B, but there is no clear boundary between them. The thin film transistor is f...

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Abstract

The invention provides a method for preparing a semiconductor device, which adopts the process of directly implanting high-concentration impurity ions into the semiconductor layer, avoids implanting high-concentration impurity ions through the capacitor dielectric layer, and reduces the impact on the capacitor dielectric layer, without increasing the process steps. Under the premise of this method, it effectively solves the problem of the voltage resistance drop of the capacitor caused by the damage of the capacitor dielectric layer, improves the yield rate of semiconductor devices, and greatly reduces the production cost. The semiconductor device provided by the invention not only has excellent capacitor withstand voltage performance, and the drift value of the threshold voltage of the thin film transistor is small, but also has a simple preparation method and is suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a semiconductor device in an active matrix organic electroluminescent display device and the semiconductor device prepared by the method. Background technique [0002] Organic Light-Emitting Diode (English full name Organic Light-Emitting Diode, referred to as OLED) is an active light-emitting device, which has the advantages of high contrast, wide viewing angle, and low power consumption. It is currently one of the most concerned technologies in flat panel display technology. [0003] The active matrix organic light emitting display device (English full name Active Matrix organic lighting emitting display, referred to as AMOLED) uses a thin film transistor (English full name Thin Film Transistor, referred to as TFT) with a capacitor to store signals to control the brightness and grayscale performance of organic light emitting diodes. display device. Each...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/52H01L27/32
Inventor 陈浩
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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