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Transistor forming method

A technology of transistors and contact holes, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as silicide damage, and achieve good electrical connection effects

Active Publication Date: 2015-06-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the method of forming contact holes in the prior art is easy to cause damage to the silicide

Method used

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Embodiment Construction

[0037] Aiming at the problem that the silicide contact layer in the contact hole is easily damaged mentioned in the background technology, the formation method of the contact hole in the transistor is analyzed. Before forming the gate contact hole, it is necessary to fill the source-drain contact hole with an organic resist. The etchant layer provides a flat surface for the photolithography of the gate contact hole. In the process of removing the organic resist layer in the source-drain contact hole, it is easy to cause damage to the contact layer at the bottom of the source-drain contact hole. In addition, before filling the conductive layer into the gate contact hole and the source-drain contact hole, it is necessary to clean the inside of the gate contact hole and the source-drain contact hole, and the cleaning agent used for cleaning will also damage the silicide contact layer. .

[0038] A process of forming a protective layer is added between the formation of the gate co...

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Abstract

The invention provides a transistor forming method. The method includes providing a substrate; forming a source electrode, a leak electrode and a grid electrode on the substrate; covering the substrate, the source electrode, the leak electrode and the grid electrode with a medium layer; forming a first contact hole in the medium layer by photoetching, connecting the first contact hole with the source and leak electrodes, arranging a contact layer on the surfaces of the source and leak electrodes, covering the inner wall of the first contact hole and the surface of the contact layer with protection layers, forming an organic resist layer on the medium layer, forming a second contact hole by photoetching, and exposing the grid electrode through the second contact hole; removing the protection layer of the bottom of the first contact hole; forming conducting plugs in the first and second contact holes. The contact layer can be protected effectively through the protection layer covering the surface of the contact layer, the fine appearance of the contact layer can be maintained after the photoetching and cleaning processes of the second contact hole and the organic resist layer removing process, and the performance of a transistor is improved.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a method for forming a transistor. Background technique [0002] When multiple MOS transistors are connected to each other, an insulating interlayer dielectric layer is usually grown on the source, drain, and gate of a single MOS transistor, and an insulating interlayer dielectric layer is formed between the interlayer dielectric layer and the source, A contact hole (Contact Hole) is opened at the position corresponding to the drain and the gate to expose a part of the source and drain, and then a conductive material is filled in the contact hole to form a conductive plug. It is connected with the sources and drains of other MOS transistors, thereby realizing the interconnection between multiple MOS transistors. [0003] However, the conductivity between the conductive plug and the source and drain is not ideal. The conductive performance is directly related to the contact...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/336
CPCH01L21/768H01L29/66477
Inventor 张城龙张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP
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