Lateral epitaxial technique based longitudinal structure AlGaN/GaN HEMT device and manufacture method thereof

Abstract

The invention discloses a lateral epitaxial technique based longitudinal structure AlGaN / GaN HEMT device and a manufacture method thereof. The device comprises a substrate, a current blocking layer and an epitaxial layer, wherein the current blocking layer is formed on the substrate; the epitaxial layer laterally epitaxially grows on the current blocking layer; a current conducting through hole is formed in the current blocking layer. According to the invention, the current blocking layer acts as an insulation layer, so that the problems that the two-dimensional electron gas concentration, self-diffusion, high electricity leakage and the like are caused by ion implantation damage due to Mg doping, barrier height improvement by Mg ion implantation and formation of a similar insulation layer by Al ion implantation in a traditional technology can be solved; meanwhile, the defects of high cost, long time consumption, technology complexity and the like due to secondary epitaxial growth are also prevented; in addition, a clearance region formed by incomplete healing is isolated via F ion implantation, so that the clearance region is not involved in the device structure, and the problems of electric leakage and the like caused by the clearance region are relieved effectively.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a vertical structure AlGaN / GaN HEMT device based on lateral epitaxy technology and a manufacturing method thereof. Background technique [0002] The application of wide bandgap semiconductor materials (bandgap greater than 2.2eV) in optoelectronic devices and electronic devices has surpassed that of Si-based and GaAs-based devices. With large band gap and high bonding energy, III-V nitrides are suitable for high-frequency and high-power fields, such as wireless communication base stations, radar, automotive electronics, etc.; with their excellent chemical and thermal stability It is suitable for making electronic and optoelectronic devices with high temperature resistance and radiation resistance. There is an urgent demand for such devices in harsh environments such as aerospace, nuclear industry, and military electronics. In addition to the application of optoelectronic ...

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Problems solved by technology

[0007] (4) Using lateral epitaxial SiO 2 As a current blocking layer, it just stays in the simulation, and at the same time, it does not give a good solution to the gaps that appear during the lateral epitaxy growth process. Instead, it simply verifies certain feasibility through simulation, and there is no specific solution. Get the whole structure of the device and the model of device fabrication

[0008] However, regardless of the use of Mg ion implantation or doping, on the one hand, it will introduce lattice damage, especially for the current blocking layer, resulting in a large leakage. On the other hand, Mg has a strong memory effect, which has a great impact on the secondary epitaxy Diffusion

The leakage and current collapse effects caused by the lattice damage caused by Al ion implantation are particularly serious. The reason for this current collapse is mainly due to the defects introduced by Al implantation, and the lattice damage caused by Al implantation must be performed at a very high temperature. It can only be repaired, and the temperature is about 1350°C. It is more complicated and relatively expensive for industrial use. At the same time, the lattice damage caused by large-scale ion implantation has an impact on the crystal quality of the secondary epitaxy; at the same time, SiO 2 The current blocking layer does not give a specific device structure and avoids problems such as voids during the healing process caused by lateral epitaxial growth

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