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Gold alloy target and preparation method thereof

A technology of gold alloy and target material, which is applied in the field of gold alloy target material and its preparation, can solve the problems of destroying contact performance and raising the ohmic contact resistance value, and achieve the reduction of ohmic contact resistance value, low ohmic contact resistance value, excellent Effect of High Temperature Stability

Active Publication Date: 2015-04-29
BEIJING INST OF NONFERROUS METALS & RARE EARTH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the ohmic contact principle of GaAs semiconductor devices, the interdiffusion of Ga and Ge is the basis for the formation of ohmic contact, but excessive diffusion of Ge will increase the ohmic contact resistance value and destroy the contact performance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The furnace weight during centrifugal casting is 5.10 kg.

[0041] Weigh 4.33kg of Au, 0.48kg of Ge, and 0.29kg of Ni, put them into the quartz crucible of the centrifugal casting machine, and evacuate to 8.0×10 -2 pa, using super-audio frequency induction melting, throwing the metal into the graphite mold after the metal is completely melted, the centrifugal casting temperature is 645°C, and the throwing arm speed is 30r / min. A slab with a thickness of 10.0 mm, a width of 100.0 mm and a length of 430.0 mm was cast.

[0042] The prepared slab was heated to 245°C on a copper heating plate, and pressed continuously for 2 minutes with a 10,000-ton press, and the pressure was maintained at 180 MPa.

[0043] The hot-pressed slab is processed by a milling machine. First, the length, width, and thickness of the plate are milled to 8.5mm×90.5mm×420.5mm with a carbide milling cutter, and then the diamond milling cutter is used for finishing, and finally processed to The finish...

Embodiment 2

[0045] The furnace weight during centrifugal casting is 5.13 kg.

[0046] Weigh 4.31kg of Au, 0.56kg of Ge, and 0.26kg of Ni, put them into the quartz crucible of the centrifugal casting machine, and evacuate to 8.5×10 -2 pa, using super-audio frequency induction melting, throwing the metal into the graphite mold after the metal is completely melted, the centrifugal casting temperature is 648°C, and the throwing arm speed is 32r / min. A slab with a thickness of 10.0 mm, a width of 100.0 mm and a length of 430.0 mm was cast.

[0047] The prepared slab was heated to 248°C on a copper heating plate, and pressed continuously for 2 minutes with a 10,000-ton press, and the pressure was maintained at 185MPa.

[0048] The hot-pressed slab is processed by a milling machine. First, the length, width, and thickness of the plate are milled to 8.5mm×90.5mm×420.5mm with a carbide milling cutter, and then the diamond milling cutter is used for finishing, and finally processed to The finishe...

Embodiment 3

[0050] The furnace weight during centrifugal casting is 5.17kg.

[0051]Weigh 4.29kg of Au, 0.62kg of Ge, and 0.26kg of Ni, put them into the quartz crucible of the centrifugal casting machine, and evacuate to 9.0×10 -2 pa, using super-audio frequency induction melting, throwing the metal into the graphite mold after complete melting, the centrifugal casting temperature is 650°C, and the throwing arm speed is 34r / min. A slab with a thickness of 10.0 mm, a width of 100.0 mm and a length of 430.0 mm was cast.

[0052] The prepared slab was heated to 250°C on a copper heating plate, and pressed continuously for 2 minutes with a 10,000-ton press, and the pressure was maintained at 190 MPa.

[0053] The hot-pressed slab is processed by a milling machine. First, the length, width, and thickness of the plate are milled to 8.5mm×90.5mm×420.5mm with a carbide milling cutter, and then the diamond milling cutter is used for finishing, and finally processed to The finished product size ...

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Abstract

The invention discloses a gold alloy target and a preparation method thereof and is mainly applied to manufacturing of ohmic contacts of GaAs-based semiconductor devices. The gold alloy target comprises components in percentage as follows: 9.5-13.5wt% of Ge, 4.2-5.8wt% of Ni and the balance of Au. The density of the target is higher than 99.8%, the oxygen content is lower than 50 ppm, the surface roughness Ra is higher than 0.5 mu m, the target is accurate in component and precise in size, has the tinier organization structure and is prepared with centrifugal casting, hot pressing and machining methods, and the method is short in process, low in cost and suitable for mass production. With the adoption of the method, the machining difficulty caused by alloy brittleness is overcome, and the gold alloy sputtering target with excellent performance can be prepared.

Description

technical field [0001] The invention relates to a gold alloy target material and a preparation method thereof, which are mainly used for the ohmic contact production of GaAs-based semiconductor devices, and belong to the technical field of metallurgy and rolling processing. Background technique [0002] GaAs-based semiconductor materials are the most important and widely used semiconductor materials in compound semiconductors. They are currently the most mature and produced compound semiconductor materials, and they are also the basic materials for microelectronics and optoelectronics. Because GaAs has high electron mobility, large band gap and direct band gap, it is easy to be made into semi-insulating material, low intrinsic carrier concentration, good photoelectric characteristics, and has good heat resistance, radiation resistance and sensitivity to magnetic field. And other excellent characteristics, semiconductor devices made of GaAs materials have good frequency respo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C5/02C23C14/14
Inventor 张国清郭菲菲黄小凯黄晓猛
Owner BEIJING INST OF NONFERROUS METALS & RARE EARTH
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