Preparation method of strong ultraviolet photoluminescent ZnO ordered nano column

A technology of nano-columns and ultraviolet light, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of obvious luminescence, reduced luminescence of red light defects, and low luminous efficiency of purple light, so as to achieve obvious enhancement effect, increase radiation recombination rate, The preparation method is simple and effective

Inactive Publication Date: 2015-04-29
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
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Problems solved by technology

[0004] In order to overcome the shortcomings of the current ZnO ordered nanocolumns with obvious red light defects and low purple light luminous efficiency, the purpose of the present invention is to provide a method for preparing ZnO ordered nanocolumns with strong ultraviolet photoluminescence, which greatly improves the ZnO photoluminescence. The violet luminescence intensity of ordered nanopillars, while the red light defect luminescence is significantly reduced

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  • Preparation method of strong ultraviolet photoluminescent ZnO ordered nano column
  • Preparation method of strong ultraviolet photoluminescent ZnO ordered nano column
  • Preparation method of strong ultraviolet photoluminescent ZnO ordered nano column

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Embodiment 1

[0033] Such as figure 1 As shown, the preparation method of the strong ultraviolet photoluminescence ZnO ordered nanocolumn of the present embodiment comprises the following steps:

[0034] (1) Preparation of ZnO ordered nanocolumns:

[0035] (1-1) Assemble single-layer polystyrene microspheres on Si substrates by pulling method: put the silicon substrate into H 2 SO 4 :H 2 o 2 (volume ratio)=3:1 solution soaks 3 hours and carries out hydrophilic treatment to substrate;

[0036] Fix the two silicon wafers after hydrophilic treatment on the sample table and the lifting rod of the pulling machine respectively, fix the two silicon wafers in parallel, adjust the distance between them at 140 μm, and use a pipette gun to place the gap between the two silicon substrates. Drop 1-2 drops of polystyrene microsphere solution into the glass, let it stand for about 3 minutes, and then lift the silicon wafer on the lifting rod at a constant speed. Finally realize the self-assembled si...

Embodiment 2

[0046] The preparation method of the strong ultraviolet photoluminescence ZnO ordered nanocolumn of the present embodiment comprises the following steps:

[0047] (1) Preparation of ZnO ordered nanocolumns:

[0048] (1-1) on SiO 2 Or assemble single-layer polystyrene microspheres on Si substrate by pulling method, the pulling rate is 300μm / s;

[0049] (1-2) Transfer monolayer polystyrene microspheres to GaN substrate, and spin-coat TiO in the substrate gap 2 colloid;

[0050] (1-3) Ultrasonically remove polystyrene microspheres in toluene to expose the GaN surface on which ordered ZnO nanocolumns need to grow, the ultrasonic power is 5W, and the ultrasonic time is 20min;

[0051] (1-4) Adopting hydrothermal reaction method to grow ZnO ordered nanocolumns: the reaction vessel is a high-pressure reactor, and the reactant is a mixed solution of zinc nitrate hexahydrate and hexamethyltetramine, and the concentration of the reactant is 0.03mol / L , the reaction temperature is 40...

Embodiment 3

[0056] The preparation method of the strong ultraviolet photoluminescence ZnO ordered nanocolumn of the present embodiment comprises the following steps:

[0057] (1) Preparation of ZnO ordered nanocolumns:

[0058] (1-1) on SiO 2 Or assemble single-layer polystyrene microspheres on Si substrate by pulling method, and the pulling rate is 600 μm / s;

[0059] (1-2) Transfer monolayer polystyrene microspheres to GaN substrate, and spin-coat TiO in the substrate gap 2 colloid;

[0060] (1-3) Ultrasonically remove polystyrene microspheres in toluene to expose the GaN surface on which ordered ZnO nanocolumns need to grow, the ultrasonic power is 5W, and the ultrasonic time is 40min;

[0061] (1-4) Adopting hydrothermal reaction method to grow ZnO ordered nanocolumns: the reaction vessel is a high-pressure reactor, the reactant is a mixed solution of zinc nitrate hexahydrate and hexamethyltetramine, and the concentration of the reactant is 0.07mol / L , the reaction temperature is 8...

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Abstract

The invention discloses a preparation method of a strong ultraviolet photoluminescent ZnO ordered nano column. The method comprises the following steps: (1) preparing a ZnO ordered nano column; (2) transferring a graphene film to the upper surface of the ZnO ordered nano column by virtue of wet method transferring, and performing annealing treatment; and (3) carrying out spin-coating Au nano-particles on the surface of the graphene film. According to the ZnO ordered nano column prepared by the method disclosed by the invention, the ultraviolet luminous intensity of the ZnO ordered nano column is greatly improved, and the red light defect luminescence is obviously reduced at the same time; and the preparation method is simple and is low in cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, in particular to a preparation method of ZnO ordered nanocolumns with strong ultraviolet photoluminescence. Background technique [0002] Wide bandgap semiconductors have aroused widespread research interest due to their potential application in short-wavelength optoelectronic devices. Among these wide bandgap materials, ZnO has a wide direct bandgap (3.37eV), high room temperature exciton binding energy (60meV) has become the most potential short-wavelength optoelectronic material, and is a potential application material for preparing short-wavelength light-emitting diodes, lasers and other optoelectronic devices. Among them, ZnO nanostructures, especially one-dimensional ZnO nanostructures, are widely used in the preparation of nanopolaritons and ZnO nanocolumn-based luminescence due to their high crystal quality, excellent waveguide characteristics, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/54C09K11/02
Inventor 张曙光李国强高芳亮温雷李景灵
Owner SOUTH CHINA UNIV OF TECH
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