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Method for preparing BTS film by virtue of radio frequency magnetron sputtering

A radio frequency magnetron sputtering and thin film technology, applied in the field of magnetron sputtering, can solve the difficulty of epitaxy or growth of preferentially oriented BST thin films, reduce the effective capacitance of ferroelectric thin film capacitors, and reduce the dielectric and ferroelectric properties of ferroelectric thin films and other problems, to achieve good structural properties and visible light transmittance, good application prospects, and the effect of reducing production costs

Inactive Publication Date: 2015-04-22
庞凤梅 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to realize the integration of BST thin films and traditional integrated circuits, people hope to grow BST thin films on single crystal Si wafers, but the lattice constant of BST is quite different from that of Si. film is difficult
Moreover, in the high temperature process, the Si substrate will undergo an oxidation reaction to form an oxide layer with high resistance and low dielectric coefficient, which will greatly reduce the dielectric and ferroelectric properties of the ferroelectric film, which will reduce the performance of the ferroelectric film capacitor. Effective capacitance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A method for preparing BTS thin films by radio frequency magnetron sputtering, comprising the steps of:

[0019] 1) Preparation of powder target: first Ba(Sn 0.15 Ti 0.85 )O 3 The powder is injected into the mold, paved, and after the mold is closed, the pressing time is 10 minutes under the pressure of 100Mpa, and then it can be pressed into shape;

[0020] 2) Place the target prepared in step 1) and the substrate with thermal conductivity in the vacuum sputtering chamber;

[0021] 3) Introduce oxygen and argon into the vacuum sputtering chamber, adjust the flow ratio of oxygen and argon to 12:2, set the target spacing to 8mm, set the coating power to 150, and the coating time to 4h. The injection pressure is 1.0Pa, and the heating temperature of the substrate is 200°C;

[0022] 4) After the sputtering is completed, the coated substrate is annealed to obtain the film, wherein the heating time of the annealing treatment is 2 hours, the annealing temperature is set t...

Embodiment 2

[0024] A method for preparing BTS thin films by radio frequency magnetron sputtering, comprising the steps of:

[0025] 1) Preparation of powder target: first Ba(Sn 0.15 Ti 0.85 )O 3 The powder is injected into the mold, paved, and after the mold is closed, the pressing time is 10 minutes under the pressure of 100Mpa, and then it can be pressed into shape;

[0026] 2) Place the target prepared in step 1) and the substrate with thermal conductivity in the vacuum sputtering chamber;

[0027] 3) Introduce oxygen and argon into the vacuum sputtering chamber, adjust the flow ratio of oxygen and argon to 14:2, set the target spacing to 8mm, set the coating power to 175w, and the coating time to 3h. The injection pressure is 1.3Pa, and the heating temperature of the substrate is 200°C;

[0028] 4) After the sputtering is completed, the coated substrate is annealed to obtain the thin film, wherein the heating time of the annealing treatment is 3 hours, the annealing temperature is...

Embodiment 3

[0030] A method for preparing BTS thin films by radio frequency magnetron sputtering, comprising the steps of:

[0031] 1) Preparation of powder target: first Ba(Sn 0.15 Ti 0.85 )O 3 The powder is injected into the mold, paved, and after the mold is closed, the pressing time is 10 minutes under the pressure of 100Mpa, and then it can be pressed into shape;

[0032] 2) Place the target prepared in step 1) and the substrate with thermal conductivity in the vacuum sputtering chamber;

[0033] 3) Introduce oxygen and argon into the vacuum sputtering chamber, adjust the flow ratio of oxygen and argon to 12:2, set the target spacing to 8mm, set the coating power to 160w, and the coating time to 4h. The injection pressure is 1.3Pa, and the heating temperature of the substrate is 300°C;

[0034] 4) After the sputtering is completed, the coated substrate is annealed to obtain the film, wherein the heating time of the annealing treatment is 2 hours, the annealing temperature is set ...

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Abstract

The invention relates to a method for preparing a BTS film by virtue of radio frequency magnetron sputtering. The method comprises the following steps: (1) firstly injecting ITO powder into a mold, rolling out, sealing the mold, and carrying out compression shaping; (2) putting target materials prepared in the step (1) and a substrate with a heat-conducting property into a vacuum sputtering cavity; (3) supplying oxygen and argon into the vacuum sputtering cavity, regulating the flow ratio of the oxygen and the argon to (12-18) to (2-8), regulating the intervals of the target materials to 8mm, setting the film plating power to 150w-175w, setting the film plating time to 3-4 hours, setting the sputtering pressure to 1.0Pa-1.5Pa, and setting the heating temperature of substrate to 200-400 DEG C; and (4) after the sputtering is finished, annealing the film-plated substrate, so as to obtain the film. According to the method, the film is prepared from powder target materials, so that the preparation cost of the BTS film is greatly lowered, and a sample prepared based on the process foundation has good structural performance and visible light permeability and excellent electrical performance.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering, in particular to a method for preparing BTS thin films by radio frequency magnetron sputtering. Background technique [0002] BTS ferroelectric thin films have excellent nonlinear dielectric properties and have good application prospects in capacitor devices. However, the research on barium tin titanate thin film is not deep enough at present, and the influence of its preparation process and composition on its structure and performance is not very clear, and the quality of the thin film needs to be improved. There are still some unsolved problems in the further research and development of this kind of thin film. Therefore, this paper takes BTS as the research object, and seeks the excellent electrical properties of BTS thin films through radio frequency magnetron sputtering process, in order to provide a valuable reference for the further development of BTS thin films. The prepar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58
Inventor 庞凤梅徐国华罗永城
Owner 庞凤梅
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