Preparation method of silicon carbide film

Abstract

The invention relates to a preparation method of a cubic silicon carbide film, which comprises the following steps: putting a cleaned substrate onto a substrate seat of cold-wall laser chemical vapor deposition device, and vacuumizing; introducing a right amount of argon; starting the laser to radiate the substrate surface until the substrate temperature rises to the set temperature for depositing the silicon carbide film, and keeping the temperature stable; starting a current-carrying gas containing HMDS, adjusting the vacuum degree of the reaction chamber, and keeping for 5-30 minutes; and shutting down the current-carrying gas containing HMDS, shutting down the laser and diluting gas, vacuumizing, and naturally cooling to room temperature. The silicon carbide film has the advantages of higher specific area and abundant surface topography. Therefore, the catalyst can be attached to the silicon carbide support surface more easily, thereby enhancing the supporting capacity of the catalyst and the adhesive force of the support, prolonging the service life of the catalyst, increasing the contact area between the catalyst and reaction substance and enhancing the catalytic efficiency of the catalyst.

Description

technical field [0001] The invention relates to a method for preparing a cubic silicon carbide (3C-SiC) film with a high specific surface area, and belongs to the field of preparation of inorganic films and coating materials. Background technique [0002] Silicon carbide is not only widely used in microelectronics and mechanical industries because of its excellent performance, but also because of its heat resistance, corrosion resistance, thermal conductivity, high strength, etc., it is used as an ideal catalyst carrier, which can be used in extreme ( High temperature, acid and alkali) environment, such as large vehicle exhaust, industrial waste gas emission treatment system. At present, there are few studies on silicon carbide as a catalyst carrier at home and abroad. The finished silicon carbide catalyst carrier (usually a fired ceramic block) has a low specific surface area and a single surface morphology, which makes the catalyst and silicon carbide carrier. The adhesio...

AI Technical Summary

Problems solved by technology

At present, there are few studies on silicon carbide as a catalyst carrier at home and abroad. The finished silicon carbide catalyst carrier (usually a fired ceramic block) has a low specific surface area and a single surface morphology, which makes the difference between the catalyst and the silicon carbide carrier. The adhesion between them is low, and the catalyst is easy to fall off during use, which shortens the service life of the catalyst

In addition, the lower specific surface area also limits the loading of the catalyst, resulting in less contact area between the catalyst and the reactant in the catalytic assembly and lower efficiency.

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