A method for manufacturing ultra-high voltage and fast recovery glass-encapsulated diodes above 13,000 volts

Abstract

The invention discloses a method for manufacturing a fast-recovery glass package diode with an ultra-high voltage above 13,000 V. The method comprises the steps that N type semiconductor silicon materials are adopted as a semiconductor substrate, N+ type impurities are doped on the N type semiconductor substrate, an N+ type impurity layer on one face of the semiconductor substrate is removed, P+ type impurities are dually doped on exposed N- type semiconductor materials, then heavy metal platinum doping is carried out, metallization layers on the two faces of a silicon wafer are manufactured through a vacuum coating technology, a plurality of chips are bonded to a pipe core assembly in a metallurgy mode, the silicon wafer is divided into pipe cores of the needed size, the divided pipe core assembly and a lead assembly are bonded through high-temperature sintering and metallurgy, glass passivation and packaging are carried out, adjusted glass powder paste coats the twelve pipe cores connected in series, and manufacturing of the glass package diode is completed. The method has the advantages of being high in voltage, small in forward direction, fast in reverse restoration, good in high-temperature work stability, high in long-term work stability and the like, and is widely applied to the field of aviation, aerospace, electronics, weapons, ships and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a method for manufacturing an ultra-high voltage and fast-recovery glass-encapsulated diode of more than 13,000 volts. Background technique [0002] In large-scale or high-voltage circuits, due to the low reverse withstand voltage of general rectifier diodes, the PN junction is broken down in the negative half cycle and cannot complete the rectification function. Therefore, silicon stacks are generally composed of multiple diodes in series at home and abroad. Achieve high reverse withstand voltage. However, due to the series connection of multiple diodes, the process is complicated and not suitable for mass production. The silicon stack after series connection is bulky and inconvenient to install. The total forward voltage drop of the silicon stack after series connection is the sum of the bulk voltage drop of each diode. When working, the forward power loss is large, and t...

AI Technical Summary

Problems solved by technology

However, due to the series connection of multiple diodes, the process is complicated and not suitable for mass production. The silicon stack after series connection is bulky and inconvenient to install. The total forward voltage drop of the silicon stack after series connection is the sum of the bulk voltage drop of each diode. Large forward power loss and poor rectification effect during operation

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