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Manufacturing method for three-dimension controllable silicon based mold

A mold manufacturing, silicon-based technology, applied in the field of surface relief structure layer transfer technology, can solve problems such as high cost and high complexity, achieve stable etching rate, wide range of uses, and reduce production costs

Inactive Publication Date: 2014-09-17
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for manufacturing a three-dimensional silicon-based mold with simple process, controllable operation and good repeatability, so as to solve the problems of high cost and high complexity in the prior art

Method used

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  • Manufacturing method for three-dimension controllable silicon based mold
  • Manufacturing method for three-dimension controllable silicon based mold
  • Manufacturing method for three-dimension controllable silicon based mold

Examples

Experimental program
Comparison scheme
Effect test

Embodiment １

[0037] 1. Design the negative plate of the silicon-based mold according to the actual needs, and use the single-point diamond cutting method to process the designed pattern on the metal copper material, see figure 1 and figure 2 , the depth of the three-dimensional relief structure in this embodiment is 6.69 μm;

[0038] 2. Prepare PMMA solution in anisole according to the ratio of solute to solution mass ratio of 3:10; after the solute is fully dissolved, spin-coat it on the cleaned silicon wafer with a KW-4A / 5 type glue homogenizer, at 90°C Dry for 5 minutes, and form a PMMA film with uniform thickness after drying;

[0039] 3. Transfer the relief structure on the master mold to the silicon-based material coated with PMMA by hot embossing;

[0040] 4. Perform plasma etching on the ICP180 equipment produced by Oxford Instruments Co., Ltd., such as Figure 4 , the position of the intersection point is the optimal gas ratio during etching, and the gas ratio of the intersect...

Embodiment ２

[0042] 1. Design the metal negative plate structure such as Image 6 As shown, the depth of the structure is 6 μm, and the required structure is processed on the metal copper by single-point diamond cutting method, which is used as the negative plate for making the silicon mold;

[0043] 2. Prepare PMMA solution in anisole according to the ratio of solute to solution mass ratio of 5:10; after the solute is fully dissolved, spin-coat it on the cleaned silicon wafer with a KW-4A / 5 type glue homogenizer, at 90°C Dry for 5 minutes, and form a PMMA film with uniform thickness after drying;

[0044] 3. Transfer the relief structure on the negative plate to the silicon-based material coated with PMMA by hot embossing;

[0045] 4. Plasma etching realizes layer transfer, according to the gas ratio SF 6 :O 2 =3.5:10, the two kinds of gases that pass into the reaction chamber are set to be 9sccm and 30sccm respectively, and after 30 minutes of plasma etching, the transfer of the layer...

Embodiment ３

[0047] 1. Design the metal negative plate structure such as Figure 8 As shown, the depth of the structure is 9 μm, and the required structure is processed on the metal copper by single-point diamond cutting method, which is used as the negative plate for making the silicon mold;

[0048] 2. Prepare PMMA solution in anisole according to the ratio of solute to solution mass ratio of 2:10; after the solute is fully dissolved, spin-coat it on the cleaned silicon wafer with a KW-4A / 5 type glue homogenizer, 90°C Dry for 5 minutes, and form a PMMA film with uniform thickness after drying;

[0049] 3. Transfer the relief structure on the negative plate to the silicon-based material coated with PMMA by hot embossing;

[0050] 4. Plasma etching realizes layer transfer, according to the gas ratio SF 6 :O 2 =2.5:10, set the two gases that are passed into the reaction chamber to be 15sccm and 50sccm respectively, after 20 minutes of plasma etching, the layer transfer is completed, and th...

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Abstract

The invention relates to manufacturing of a silicon based mold in mold pressing manufacturing technologies, and the method is used for machining a three-dimensional shape with a continuously variable embossment structure on a silicon base. The main machining steps include: 1. making a female die with a continuous curved surface appearance embossment structure on a metal material by a single-point diamond turning technology; 2. performing spin coating of a layer of polymer film on a silicon substrate; 3. transferring the embossment structure on the die to the polymer by a hot stamping technology; and 4. transferring the embossment structure on the glue to the silicon material at a same proportion through plasma etching, thus obtaining the silicon based mold. The method provided by the invention has the advantages of controllable appearance, simple process, fast speed, and good repeatability.

Description

technical field [0001] The invention belongs to the manufacturing method of a mold in the molding technology, which can be used for processing micro-optical elements, and relates to the transfer technology of a curved surface relief structure layer. Background technique [0002] With the development of micro-optical element manufacturing technology, the exposure wavelength used in the lithography technology used to process traditional micro-optical elements has shrunk to the limit. With the increase in the cost and complexity of short-wavelength exposure technology, molding technology is The advantages of flexibility, low cost, and fast processing have rapidly developed and become the main candidate technology for the next generation of lithography. [0003] Mold manufacturing technology is the key to molding manufacturing technology. The resolution of the mold determines the resolution of the graphics transferred to the polymer. Only a high-precision mold can reproduce high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/02C23F1/12
Inventor 刘卫国蔡长龙巩燕龙周顺秦文罡刘欢
Owner XIAN TECHNOLOGICAL UNIV
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