Preparation method of ordered polyaniline nano-wire array

A technology of nanowire array and polyaniline, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem that the orientation and order of polyaniline nanowires/tubes are easy to be destroyed, difficult to Realize the precise control of the density, position and size of polyaniline nanowires, and achieve the effects of controllable direction, increased array order, and ultra-fine diameter

Inactive Publication Date: 2014-08-20
GUANGDONG UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Polyaniline nanomaterials with various shapes such as nanorods, nanotubes, and nanofibers can be prepared by template synthesis, self-assembly, interfacial polymerization, and other synthetic techniques, but these methods are difficult to achieve the density, position, and location of polyaniline nanowires. and precise control of size, and the orientation and order of polyaniline nanowires / tubes are easily destroyed during the removal of these hard templates

Method used

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  • Preparation method of ordered polyaniline nano-wire array
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  • Preparation method of ordered polyaniline nano-wire array

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Experimental program
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Embodiment 1

[0025] Put the clean semiconductor silicon wafer in the hydrochloric acid solution of aniline (dissolve aniline in hydrochloric acid with a mass content of 37%), then add the oxidant ammonium persulfate to the hydrochloric acid solution of aniline, and grow polyaniline nanometers on the semiconductor silicon wafer by oxidizing aniline. Wire. The mass ratio of aniline:oxidant:hydrochloric acid is 5:3:1000, and the reaction time is 120min. The obtained polyaniline nanowire scanning electron microscope picture is attached figure 1 shown.

Embodiment 2

[0027] (1) The precursor manganese nitrate for preparing the oxide layer is dissolved in a good solvent methanol to form a precursor solution, and the precursor solution is spin-coated on the surface of the semiconductor silicon wafer, and then the oxide layer is formed by process-controlled calcination. Among them, the mass ratio of manganese nitrate:methanol is 10:1000; the program-controlled calcination program heating rate is 1°C / min, the temperature rises to 600°C, the constant temperature is 600°C, and the constant temperature time is 2h; the temperature is lowered to room temperature, and the cooling rate is 1°C / min.

[0028] (2) Dissolve the block copolymer polystyrene-b-poly(4-vinylpyridine) in a good solvent chloroform to form a spin-coating solution, and then spin-coat the spin-coating solution on the oxide layer, polystyrene-b- The mass ratio of poly(4-vinylpyridine) to chloroform was 1:250, and the spin coating was carried out in two steps: first, slow spin coati...

Embodiment 3

[0035] (1) The precursor manganese nitrate for preparing the oxide layer is dissolved in a good solvent methanol to form a precursor solution, and the precursor solution is spin-coated on the surface of the semiconductor silicon wafer, and then the oxide layer is formed by process-controlled calcination. Among them, the mass ratio of manganese nitrate: methanol is 2:1000; the programmed heating rate of programmed calcination is 1°C / min, the temperature rises to 600°C, the constant temperature is 600°C, and the constant temperature time is 2h; the temperature is lowered to room temperature, and the cooling rate is 1°C / min.

[0036] (2) Dissolve the block copolymer polystyrene-b-poly(4-vinylpyridine) in a good solvent chloroform to form a spin-coating solution, and then spin-coat the spin-coating solution on the oxide layer, polystyrene-b- The mass ratio of poly(4-vinylpyridine) to chloroform was 1:1000, and the spin coating was carried out in two steps: first, slow spin coatin...

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Abstract

The invention discloses a preparation method of an ordered polyaniline nano-wire array. The method comprises the following steps: preparing a segmented copolymer ordered cylindrical nano-film with a crystalline MnO2 film as a substrate by utilizing the micro-phase separation and the self-assembling characteristic of segmented copolymer styrene-b-poly(4-vinylpyridine) on the surface of the thin crystalline MnO2 film, and etching by a protonic acid to prepare a high-density ordered nano-porous film with the MnO2 as a film; and guiding polyaniline to generate polyaniline nano-seeds in nano-pores through a chemical oxidation process by utilizing the oxidation effect of MnO2 in the nano-pores with the high-density ordered nano-porous film as a substrate, and adding an oxidant ammonium persulfate into the obtained solution to make aniline in the solution continuously grow along polyaniline crystal nuclei in order to prepare the high-density polyaniline nano-wire array with controllable position, dimension and growing orientation.

Description

technical field [0001] The invention relates to a method for preparing an ordered polyaniline nanowire array. Background technique [0002] Due to the low cost of preparation, convenient processing, and the ability to detect at room temperature, conductive polymer materials can be developed towards miniaturization and miniaturization, which has attracted extensive attention of researchers. As a typical intrinsically conductive polymer material, polyaniline (PANI) has excellent chemical stability and thermal stability, is environmentally friendly, easy to process and low cost, and has excellent electrical conductivity, oxidation-reduction reversibility and Doping and dedoping characteristics, so it has broad application prospects in supercapacitors, gas sensors, biosensors, storage, water treatment and other fields. [0003] The specific properties of polyaniline are closely related to its shape, size, spatial position and density. The ordered polyaniline nanomaterials exhi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/02C04B41/52C04B41/53B82Y30/00B82Y40/00
Inventor 易国斌张政俎喜红王欢黄海亮吴建东
Owner GUANGDONG UNIV OF TECH
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