Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof and display device

Abstract

The invention relates to the technical field of display, and discloses a low-temperature polycrystalline silicon thin film transistor, a manufacturing method thereof and a display device. The manufacturing method of the low-temperature polycrystalline silicon thin film transistor comprises the steps that a polycrystalline silicon thin film is formed on a substrate, and is subjected to patterning processing to form an active layer; a grid insulating layer is formed on the active layer, and the grid insulating layer and the active layer are subjected to hydrogen treating. According to the technical scheme, after the grid insulating layer is manufactured, the grid insulating layer and the active layer are directly subjected to hydrogen treating, hydrogen just needs to penetrate through the grid insulating layer and reach an interface of the grid insulating layer and the active layer to carry out passivation on a dangling bond and overcome the crystal boundary defect of the active layer, hydrogen diffusion distance is greatly shortened, time of the hydrogenation process is reduced, and technical cost of the thin film transistor is greatly lowered.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon thin film transistor, a manufacturing method thereof, and a display device. Background technique [0002] Low Temperature Poly-Silicon Thin Film Transistor (LTPS-TFT for short) has been widely used in displays due to its advantages of high mobility and stability, such as Active Matrix Organic Light-Emitting Display (Active Matrix Organic Light Emitting Diode (AMOLED for short), Active Matrix Liquid Crystal Display (AMLCD for short), etc. [0003] The preparation process of the TFT of the above-mentioned type of display is generally to form a polysilicon film on the substrate, and pattern the polysilicon film to form the active layer of the thin film transistor; form a gate insulating layer on the active layer; form a gate on the gate insulating layer; Then implant ions in the active layer to form the source region and the drain region respectively;...

AI Technical Summary

Problems solved by technology

However, because the hydrogen in these methods usually needs to enter the active layer through the multi-layer film, the diffusion distance of hydrogen is very long. In order to fully carry out hydrogenation, it takes a long time to carry out heat treatment, which increases the process cost and time; at the same time, the long-term The heat treatment of time will cause a certain thermal impact on the TFT device, which will cause poor electrical properties of the TFT, especially when the size of the TFT is large, the impact is very large

[0005] The disadvantage of the existing technology is that hydrogen passes through more layers during the hydrogenation treatment, and the heat treatment time is longer, which leads to an increase in the process cost and easily leads to poor electrical performance of the thin film transistor.

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