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Method for growing zinc bismuth borate monocrystal through zone melting method

A technology of bismuth zinc borate, zone melting method, applied in the direction of self-zone melting method, single crystal growth, crystal growth, etc., can solve the problem of no relevant reports, and achieve the effect of high preparation efficiency, no macroscopic defects, and avoiding corrosion problems.

Inactive Publication Date: 2014-08-06
XINJIANG UYGUR AUTONOMOUS REGION PROD QUALITY SUPERVISION & INSPECTION RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, regarding Bi 2 ZnB 2 o 7 Single crystals are grown by the zone melting method, and no patents have been applied for; so far, the area melting method has grown centimeter-scale large-size, high-optical-quality Bi 2 ZnB 2 o 7 The single crystal method has not been reported in any known literature

Method used

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  • Method for growing zinc bismuth borate monocrystal through zone melting method
  • Method for growing zinc bismuth borate monocrystal through zone melting method
  • Method for growing zinc bismuth borate monocrystal through zone melting method

Examples

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Effect test

Embodiment 1

[0044] Synthetic bismuth zinc borate (Bi 2 ZnB 2 o 7 ) compound:

[0045] Sintering is carried out at a high temperature of 630°C by a solid-state synthesis method, and its chemical formula is: ZnCO 3 +B 2 o 3 +Bi 2 o 3 → Bi 2 ZnB 2 o 7 +CO 2 ↑;

[0046] a. Pure phase synthesis of powder: ZnCO 3 , B 2 o 3 and Bi 2 o 3Weigh and put it into a mortar according to the metering ratio of 1:1:1, mix and grind carefully, then put it into a corundum crucible with an opening of Φ100mm×100mm, put it into a muffle furnace, slowly raise the temperature to 550°C, and keep the temperature constant for 24 hours. Cool to room temperature, take it out and put it into the muffle furnace after the second grinding, then raise the temperature to 630°C, keep the temperature for 48 hours, cool to room temperature, take out and grind to obtain the single-phase polycrystalline powder of bismuth zinc borate compound, and then the product Carry out powder X-ray analysis, gained powder X-...

Embodiment 2

[0054] Synthetic bismuth zinc borate (Bi 2 ZnB 2 o 7 ) compounds:

[0055] Sintering is carried out at a high temperature of 635°C by a solid-state synthesis method, and its chemical equation is: Zn(NO 3 ) 2 +B 2 o 3 +Bi 2 o 3 → Bi 2 ZnB 2 o 7 +2NO 2 ↑+0.5O 2 ↑;

[0056] a, pure phase synthesis of powder: Zn(NO 3 ) 2 , B 2 o 3 and Bi 2 o 3 Weigh and put it into a mortar according to the metering ratio of 1:1:1, mix and grind carefully, then put it into a corundum crucible with an opening of Φ100mm×100mm, put it into a muffle furnace, slowly raise the temperature to 550°C, and keep the temperature constant for 24 hours. Cool to room temperature, take it out and put it into a muffle furnace after the second grinding, then raise the temperature to 635°C, keep the temperature for 48 hours, cool to room temperature, take out and grind to obtain a single-phase polycrystalline powder of bismuth zinc borate compound, and then the product Carry out powder X-ray anal...

Embodiment 3

[0064] Synthetic bismuth zinc borate (Bi 2 ZnB 2 o 7 ) compounds:

[0065] Sintering is carried out at a high temperature of 630°C by a solid-state synthesis method, and its chemical formula is: ZnCO 3 +B 2 o 3 +2Bi(OH) 3 → Bi 2 ZnB 2 o 7 +CO 2 ↑+3H 2 O↑;

[0066] a. Pure phase synthesis of powder: ZnCO 3 , B 2 o3 and Bi(OH) 3 Weigh it into a mortar according to the metering ratio of 1:1:2, mix and grind it carefully, then put it into a corundum crucible with an opening of Φ100mm×100mm, put it into a muffle furnace, slowly raise the temperature to 550°C, and keep the temperature constant for 24 hours. Cool to room temperature, take it out and put it into the muffle furnace after the second grinding, then raise the temperature to 630°C, keep the temperature for 48 hours, cool to room temperature, take out and grind to obtain the single-phase polycrystalline powder of bismuth zinc borate compound, and then the product Carry out powder X-ray analysis, gained powder...

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Abstract

The invention relates to a method for growing a zinc bismuth borate monocrystal through a zone melting method, which comprises the following steps: synthesizing a powder pure phase through a solid phase method, and growing the crystal through a zone melting device. The zinc bismuth borate Bi2ZnB2O7 nonlinear optical crystal grown through the zone melting method has the advantages that the crystal is short in growing period, easy to grow and high in efficiency; the grown crystal has high optical quality, has no macroscopic imperfection, is high in purity and is uniformly doped; the crystal can be grown without using a platinum crucible and without being subjected to environmental influence and the like. The Bi2ZnB2O7 crystal obtained through the method can be used in nonlinear optical devices such as frequency multiplication generators, upper or lower frequency converters, optical parametric oscillators and the like; and the method provided by the invention provides a new way for preparation of a large-sized Bi2ZnB2O7 nonlinear optical crystal.

Description

technical field [0001] The present invention relates to zone melting method growth bismuth zinc borate single crystal (Bi 2 ZnB 2 o 7 ) method belongs to the field of crystal growth. Background technique [0002] The zone melting method has short crystal growth period and high efficiency. It can provide high optical quality, no macroscopic defects, easy to control the composition, and can provide crystals with a maximum size and length of centimeters. It has a wide range of applications and can be used for the growth of various crystals such as ceramic materials, semiconductors, and certain metal compounds, especially crystals with strong melting and melt reactions of the same composition. The main advantage of this method is that there is no need for a platinum crucible to grow crystals, and there is no pollution. It is completely determined by the influence of the surface tension and viscosity of the crystal itself in a liquid state, and there is no thermal stress for ...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B13/34
Inventor 鹿毅李弘毅冉文生
Owner XINJIANG UYGUR AUTONOMOUS REGION PROD QUALITY SUPERVISION & INSPECTION RES INST
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